Semiconductor Integrated Device & Process Lab.

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Resistive switching characteristics of solution-processed TiOx for next-generation non-volatile memory application; transparency, flexibility, and nano-scale memory feasibility / S. Jung, J. Kong, S. Song, K. Lee, T. Lee, H. Hwang, and S. Jeon / 17th Conference on "Insulating Films on Semiconductors"
(INFOS 2011) (2011.06)
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Resistive switching characteristics of ultra-thin TiOx / J. Park, S. Jung, J. Lee, W. Lee, S. Kim, J. Shin, and H. Hwang / 17th Conference on "Insulating Films on Semiconductors"(INFOS 2011) (2011.06)
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