Band-edge metal gate materials for atomic-layer-deposited HfO2 for future CMOS technology Musarrat Hasan, Hokyung Park, Joon-myong Lee, Minseok Jo and Hyunsang Hwang Insulating Films On Semiconductors (INFOS), 2007.06.20-25

Oxygen vacancy induced charge trapping and bias temperature instability in HfO2  Minseok Jo, Hokyung Park, Man Chang, Hyung-Seok Jung, Jong-Ho Lee and Hyunsang Hwang Insulating Films On Semiconductors (INFOS), 2007.06.20-24

Improvement of Memory Properties for MANOS-engine Nonvolatile Memory Devices with High-Pressure Wet Vapor Annealing, Man Chang, Musarrat Hasan, Seungjae Jung, Hokyung Park, Minseok Jo, Hyejung Choi, Moonjae Kwon, Hyunsang Hwang, Sanmoo Choi, Insulating Films On Semiconductors (INFOS), 2007.06.20-23

Structural and Electrical Properties of High pressure Hydrogen Post-Annealed Pt-Er Ally Metal gate on HfO2 film Cheljong Choi, Moongyu Jang, Yarkyeon Kim, Myungsim Jeon, Seongjae Lee, Hyundoek Yang, Ranju Jung, Man Chang and Hyunsang Hwang  2008  211th Meeting of The Electrochemical Society pp, 582 2007.05.06-12

Resistance switching characteristics of metal oxides for nonvolatile memory application Dongsoo Lee, Wenfeng Xiang, Dongjun Sung, Rui Dong, Seokjoon Oh, Hyejung Choi and Hyunsang Hwang 2007  211th Meeting of The Electrochemical Society pp.658 2007.05.06-11

High Pressure Deuterium Annealing Effect on Nano-Scale Strained CMOS Devices Sung-Man Cho, Jeong-Hyun Lee, Man Chang, Min-Seok Jo, Hyun-Sang Hwang, Jong-kon Lee, Sung-Bo Hwang and Jong-Ho Lee 2007 IEEE International Reliability Physics Symposium Proceedings 45th annual pp. 674 2007.04.15-19

Effect of high-pressure deuterium annealing on electrical and reliability characteristics of high-K MOSFET" Hokyung Park, Musarrat Hasan, Man Chang, Minseok Jo and Hyunsang Hwang The 12th Workshop on Gate Stack Technology and Physics 2007.02.02

High Pressure Deuterium Annealing Effect on Nano-Scale Strained CMOS Devices, Sung-Man Cho, Jeong-Hyun Lee, Man Chang, Min-Seok Jo, Hyun-Sang Hwang, Jong-kon Lee, Sung-Bo Hwang and Jong-Ho Lee, 2007 IRPS, 2007.06

Ta-Sc-N intermixed metal gate structure for low work function metal gate for future MOSFET technology, Musarrat Hasan, Hokyoung Park, Hyejung Choi, Dongsoo Lee and Hyunsang Hwang, 38th IEEE Semiconductor Interface Specialists Conference, 2006.12

Excellent uniformity and reproducible resistance switching of doped binary metal oxides for non-volatile resistance memory applications, Dongsoo Lee, Dong-jun Seong, Hye jung Choi, In hwa Jo, R. Dong ,W. Xiang, ,Seokjoon Oh, Sun-ok Seo, Seongho Heo, Min Seok Jo, Dae-Kyu Hwang, H. K Park, M. Chang, M. Hasan, and Hyunsang Hwang,  Internation Electron Device Meeting (IEDM), 30.8.1-4, 2006.12.11-13, (CA, 0.1Terabit NVM)

Formations of nanocrystal for non-volatile memory applications, Moonjae Kwon, Hyejung Choi, Man Chang, Minseok Jo, Seong-jae Jeong and Hyunsang Hwang, 2006 NAIST/GIST Joint Symposium on advanced materials , pp.32, 2006.11.20-25 (CA)

High Pressure Deuterium Annealing Effect on Nano-Scale CMOS Devices with Dirrerent Channel Width, Sung-Man Cho, Jeong-Hyn Lee, Man Chang, Min-seok Jo, Hyunsang Hwang, J-K. Lee, S-B. Hwang and Jong-Ho Lee, IEEE NMDC 2006, pp.98-99, 2006.10.22-25 (ETC)

Thermal stability of metal electrodes and its impact on gate dielecric characteristics, H. Park, W.C.Wen, M.Chang, M. Jo, R. Choi, B.H. Lee, S.C. Song, C.Y. Kang, T.Lee, G. Brown, J.C.Lee and H. Hwang, Int. Conf. of Solid state device & Materials (SSDM), pp.1134-1135, 2006.10-13-15, (CA, sematech, 풍산)

Nano-scale memory characcteristics of SiN trapping layer with silicon nanocrystals prepared by SiH4 plasma immersion ion implantation, Hyejung Choi, Sangmoo Choi, Tae-wook Kim, Takhee Lee and Hyunsang Hwang, The IUMRS International Conference in Asia 2006, pp.91, 2006.09.10-14, (CA, 국민대)

Resistance switching of in-situ Cu doped MoOx for Nonvolatile Memory applications, Dongsoo Lee, Dong-jun Seong, Hyejung Choi, Sun-ok Seo, Seongho Heo, Seokjun Oh, W. Xiang, R. Dong and Hyunsang Hwang, Joint symposium on Materials Science and Engineering for 21st century, pp. 31, 2006.07.20-22(CA, RRAM(MOCIE))

Ultra-shallow p+/n Junction Formed by B18H22+ ion implantation and Excimer Laser Annealing, Sungho Heo, Dongkyu Lee, H.T.Cho, W.A.Krull and Hyunsang Hwang, IIT2006 (16th international conference on ion implantation technology), pp. 103, 2006.06.11-16 (CA, No)

Pre-annealing effects of n+/p and p+/n junction formed by plasma doping (PLAD) and laser annealing, Sungho Heo,Dongkyu Lee, Sungkweon Baek, Musarrat Hasan and Hyunsang Hwang, IIT2006 (16th international conference on ion implantation technology), pp. 55, 2006.06.11-16 (CA, No)

Characteristics of ultrashallow p+/n junction prepared cluster boron(B18H22) ion implantation and excimer laser annealing, Sungho Heo, Seokjoon Oh, Musarrat Hasan, H.T.Cho, W,A,Krull and Hyunsang Hwang, IWJT 2006, pp.48-49, 2006.05.16-17 (CA, No)

Inner Sidewall Gate MOSFET with HfO2 Gate Dielectric and Pt electrode, Kiju Im, Chang-Geun Ahn, Jong-Heon Yang, In-Bok Baek, Chel-Jong Choi, Seongjae Lee, Hyunsang Hwang, and Won-ju Cho, NSTI Nanotech 2006, pp.???, 2006.05.07-11 (ETC, No)

Decoupling of cold carrier effects in hot carrier reliability of HfO2 gated nMOSFETs, Hokyung Park, Rino Choi, Seung Chul Song, Man Chang, Chadwin D. Young, Gennadi Bersuker, Byoung Hun Lee, Jack. C. Lee and Hyunsang Hwang, 2006 IEEE International Reliability Physics Symposium Proceedings 44th annual, pp. 200-203, 2006.03.26-30 (CA, BK21,  Sematech)