Semiconductor Integrated Device & Process Lab.

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Conferences

101
Ta-Sc-N intermixed metal gate structure for low work function metal gate for future MOSFET technology, Musarrat Hasan, Hokyoung Park, Hyejung Choi, Dongsoo Lee and Hyunsang Hwang, 38th IEEE Semiconductor Interface Specialists Conference, 2006.12
100
Excellent uniformity and reproducible resistance switching of doped binary metal oxides for non-volatile resistance memory applications, Dongsoo Lee, Dong-jun Seong, Hye jung Choi, In hwa Jo, R. Dong ,W. Xiang, ,Seokjoon Oh, Sun-ok Seo, Seongho Heo, Min Seok Jo, Dae-Kyu Hwang, H. K Park, M. Chang, M. Hasan, and Hyunsang Hwang,  Internation Electron Device Meeting (IEDM), 30.8.1-4, 2006.12.11-13, (CA, 0.1Terabit NVM)
99
Formations of nanocrystal for non-volatile memory applications, Moonjae Kwon, Hyejung Choi, Man Chang, Minseok Jo, Seong-jae Jeong and Hyunsang Hwang, 2006 NAIST/GIST Joint Symposium on advanced materials , pp.32, 2006.11.20-25 (CA)
98
High Pressure Deuterium Annealing Effect on Nano-Scale CMOS Devices with Dirrerent Channel Width, Sung-Man Cho, Jeong-Hyn Lee, Man Chang, Min-seok Jo, Hyunsang Hwang, J-K. Lee, S-B. Hwang and Jong-Ho Lee, IEEE NMDC 2006, pp.98-99, 2006.10.22-25 (ETC)
97
Thermal stability of metal electrodes and its impact on gate dielecric characteristics, H. Park, W.C.Wen, M.Chang, M. Jo, R. Choi, B.H. Lee, S.C. Song, C.Y. Kang, T.Lee, G. Brown, J.C.Lee and H. Hwang, Int. Conf. of Solid state device & Materials (SSDM), pp.1134-1135, 2006.10-13-15, (CA, sematech, 풍산)
96
Nano-scale memory characcteristics of SiN trapping layer with silicon nanocrystals prepared by SiH4 plasma immersion ion implantation, Hyejung Choi, Sangmoo Choi, Tae-wook Kim, Takhee Lee and Hyunsang Hwang, The IUMRS International Conference in Asia 2006, pp.91, 2006.09.10-14, (CA, 국민대)
95
Resistance switching of in-situ Cu doped MoOx for Nonvolatile Memory applications, Dongsoo Lee, Dong-jun Seong, Hyejung Choi, Sun-ok Seo, Seongho Heo, Seokjun Oh, W. Xiang, R. Dong and Hyunsang Hwang, Joint symposium on Materials Science and Engineering for 21st century, pp. 31, 2006.07.20-22(CA, RRAM(MOCIE))
94
Ultra-shallow p+/n Junction Formed by B18H22+ ion implantation and Excimer Laser Annealing, Sungho Heo, Dongkyu Lee, H.T.Cho, W.A.Krull and Hyunsang Hwang, IIT2006 (16th international conference on ion implantation technology), pp. 103, 2006.06.11-16 (CA, No)
93
Pre-annealing effects of n+/p and p+/n junction formed by plasma doping (PLAD) and laser annealing, Sungho Heo,Dongkyu Lee, Sungkweon Baek, Musarrat Hasan and Hyunsang Hwang, IIT2006 (16th international conference on ion implantation technology), pp. 55, 2006.06.11-16 (CA, No)
92
Characteristics of ultrashallow p+/n junction prepared cluster boron(B18H22) ion implantation and excimer laser annealing, Sungho Heo, Seokjoon Oh, Musarrat Hasan, H.T.Cho, W,A,Krull and Hyunsang Hwang, IWJT 2006, pp.48-49, 2006.05.16-17 (CA, No)
91
Inner Sidewall Gate MOSFET with HfO2 Gate Dielectric and Pt electrode, Kiju Im, Chang-Geun Ahn, Jong-Heon Yang, In-Bok Baek, Chel-Jong Choi, Seongjae Lee, Hyunsang Hwang, and Won-ju Cho, NSTI Nanotech 2006, pp.???, 2006.05.07-11 (ETC, No)
90
Decoupling of cold carrier effects in hot carrier reliability of HfO2 gated nMOSFETs, Hokyung Park, Rino Choi, Seung Chul Song, Man Chang, Chadwin D. Young, Gennadi Bersuker, Byoung Hun Lee, Jack. C. Lee and Hyunsang Hwang, 2006 IEEE International Reliability Physics Symposium Proceedings 44th annual, pp. 200-203, 2006.03.26-30 (CA, BK21,  Sematech)
89
Resistance switching of Al doped ZnO for Non Volatile Memory applications, Dongsoo Lee, Dae-Kue Hwang, Man Chang, Yunik Son, Dong-jun Seong, Dooho Choi, Hyunsang Hwang, 21st Non-Volatile Semiconductor Memory Workshop (NVSMW) 2006, pp. 86~87, 2006.2.12~16 (0.1Terabit NVM, SAIT) 
88
Excellent resistance switching chracteristics of Pt/Single-crystal Nb-doped SrTiO3 schottky junction" Hyunjun Sim, Dongjun Sung, Man Chang and Hyunsang Hwang,  21st Non-Volatile Semiconductor Memory Workshop (NVSMW) 2006, pp. 88~89, 2006.2.12~16 (0.1Terabit NVM) 
87
High density silicon nanocrystal embedded in silicon nitride prepared by low energy (<0.5keV) SiH4 plasma immersion ion implantation for non-volatile memory applications, S. Choi, H. Choi, T. W. Kim, H. Yang, T. Lee, S. Jeon, C. Kim, and H. Hwang, 2005  Internation Electron Device Meeting (IEDM), pp. 7.4.1~7.4.4,2005.12.5~7(CA, BK21,TND)
86
Excellent resistance switching characteristics of Pt/SrTiO3 schottky junction for multi-bit nonvolatile memory application, H. Sim, H. Choi, D. Lee, M. Chang, D. Choi, Y. Son, E. H. Lee, W. Kim, Y. Park, I. K. Yoo and H. Hwang, 2005  Internation Electron Device Meeting (IEDM), pp. 31.6.1~31.6.4,2005.12.5~7 (CA, RRAM,SAIT)
85
Electrical and reliability chracteristics of HfSiO MOSFET annealed in F2 ambient, M. Chang, M.Jo,H.Park, M.S.Rahman, B.H.Lee,R.Choi and H.Hwang,   36th IEEE Semiconductor Interface Specialists Conference, pp.53-54, 2005.12.1~3 (CA)
84
Hot carrier reliability study of high-k MOSFET after high pressure pure D2 annealing and subsequent annealing in N2, M.S.Rahman, H.Park, M.Chang, B.H.Lee, R.Choi and H.Hwang, 36th IEEE Semiconductor Interface Specialists Conference, pp.77-78, 2005.12.1~3 (CA)
83
Resistance switching chracteristics of Pt/Nb-doped SrTiO3 schottky junction for nonvolatile memory application, H.Sim,H.Choi,D.Lee and H.Hwang, 2005 NAIST/GIST Joint Symposium on advanced materials, pp.2, 2005.11.3~4 (CA)
82
Improved electrical characteristics of fully depleted ultra-thin SOI MOSFETs by using high pressure hydrogen annealing, Y.Son,M.Chang,M.S.Rahman and H.Hwang, 2005 NAIST/GIST Joint Symposium on advanced materials, pp.14, 2005.11.3~4 (CA)