Semiconductor Integrated Device & Process Lab.

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Ti metal gate with appropriate workfunction for ALD-HfO2 NMOS devices, Hyundoek Yang, Sangmoo Choi, Sungho Huh, Hyunsang Hwang, 35th IEEE Semiconductor Interface Specialists Conference, Late News Poster #5, 2004.12 (CA, System IC 2010)
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High pressure H2/D2 annealed SONOS nonvolatile memory devices, S. Choi, M. Jang, H. park, S. Jeon, J. Kim, C. Kim, and H. Hwang, Int. Conf. of Solid state device & Materials (SSDM) pp. 652, 2004.9.
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Effects of high pressure hydrogen and deuterium annealing on nMOSFET with Hf-based gate dielectrics, H. Park, B. Lee, M. Gardner, and H. Hwang, Int. Conf. of Solid state device & Materials (SSDM) pp. 748, 2004.9.
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Triple high-k stacks (Al2O3/HfO2/Al2O3) with high pressure (10 atm) H2 and D2 annealing for SONOS engine flash memory device applications, S. Jeon, S. Choi, H. Hwang, J. H. Han, H. Chae, S. D. Chae, J. H. Kim, M. K. Kim, Y. S. Jeong, Y. Park, S. Seo, J. W. Lee, and C. W. Kim, IEEE Conference on Nanotechnology, pp. 53, 2004.8.
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The growth kinetics of HfO2 films on Si(100) grown by atomic-layer deposition using in-situ medium energy ion scattering, H. S. Chang, H. Hwang, M. H. Cho, and D. W. Moon, Materials Research Society, 2004.4.
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Effect of high-pressure hydrogen annealing on non-volatile memory device with silicon QD embedded in SiN, S. Choi, C. Cho, H. Park, M. Chang, S. Jeon, C. Kim, S. Park, and H. Hwang, IEEE Si Nanoelectronics Workshop, pp. 105, 2004.6.
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Low temperature activated Ga and Sb ion-implanted shallow junctions, S. G. Tavakoli, K. Lee, S. Baek and H. Hwang, Int. Workshop on Junction Technology, pp. 104, 2004. 3.
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Characteristics of low-temperature preannealing effects on laser-annealed p+/n and n+/p ultra-shallow junctions, S. Baek, S. Heo, H. Choi and H. Hwang, Int. Workshop on Junction Technology, pp. 54, 2004. 3.
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