Semiconductor Integrated Device & Process Lab.

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87
High density silicon nanocrystal embedded in silicon nitride prepared by low energy (<0.5keV) SiH4 plasma immersion ion implantation for non-volatile memory applications, S. Choi, H. Choi, T. W. Kim, H. Yang, T. Lee, S. Jeon, C. Kim, and H. Hwang, 2005  Internation Electron Device Meeting (IEDM), pp. 7.4.1~7.4.4,2005.12.5~7(CA, BK21,TND)
86
Excellent resistance switching characteristics of Pt/SrTiO3 schottky junction for multi-bit nonvolatile memory application, H. Sim, H. Choi, D. Lee, M. Chang, D. Choi, Y. Son, E. H. Lee, W. Kim, Y. Park, I. K. Yoo and H. Hwang, 2005  Internation Electron Device Meeting (IEDM), pp. 31.6.1~31.6.4,2005.12.5~7 (CA, RRAM,SAIT)
85
Electrical and reliability chracteristics of HfSiO MOSFET annealed in F2 ambient, M. Chang, M.Jo,H.Park, M.S.Rahman, B.H.Lee,R.Choi and H.Hwang,   36th IEEE Semiconductor Interface Specialists Conference, pp.53-54, 2005.12.1~3 (CA)
84
Hot carrier reliability study of high-k MOSFET after high pressure pure D2 annealing and subsequent annealing in N2, M.S.Rahman, H.Park, M.Chang, B.H.Lee, R.Choi and H.Hwang, 36th IEEE Semiconductor Interface Specialists Conference, pp.77-78, 2005.12.1~3 (CA)
83
Resistance switching chracteristics of Pt/Nb-doped SrTiO3 schottky junction for nonvolatile memory application, H.Sim,H.Choi,D.Lee and H.Hwang, 2005 NAIST/GIST Joint Symposium on advanced materials, pp.2, 2005.11.3~4 (CA)
82
Improved electrical characteristics of fully depleted ultra-thin SOI MOSFETs by using high pressure hydrogen annealing, Y.Son,M.Chang,M.S.Rahman and H.Hwang, 2005 NAIST/GIST Joint Symposium on advanced materials, pp.14, 2005.11.3~4 (CA)
81
Stress voltage polarity dependent threshold voltage shift behavior of ultrathin Hafnium oxide gated pMOSFET with TiN electrode, Hokyung Park, Rino Choi, Byoung Hun Lee, Chadwin D. Young, Man Chang, Jack C. Lee and Hyunsang Hwang, Int. Conf. of Solid state device & Materials (SSDM) pp. 920, 2005.9. (CA,BK21, Sematech)
80
Physical Origin of Fast Transient Charging in Hafnium Based Gate Dielectrics B.H. Lee, R.Choi, S.C.Song, J.Sim, C.D.Young, G. Bersuker, H.K. Park and H.Hwang, Int. Conf. of Solid state device & Materials (SSDM) pp. 16, 2005.9. (ETC)
79
Ultra-shallow p+/n junction prepared by low energy BF3 plasma doping and KrF Excimer laser annealing, D.Lee,S.Baek,S.Heo,C.Cho,G.Buh,T.Park,Y.Shin and H.Hwang, 2005 NAIST/GIST Joint Symposium on advanced materials, pp.17, 2005.11.3~4 (CA)
78
Improvement of Mobility on ultra-thin body SOI MOSFETs by Use of High Pressure Hydrogen annealing, Yunik Son, Md. Shahriar Rahman, Kiju Im, Man Chang, Hokyoung Park and Hyunsang Hwang, Int. Conf. of Solid state device & Materials (SSDM) pp. 46, 2005.9. (CA,MDSN) 
77
Ultra-shallow p+/n junction prepared by low energy BF3 plasma doping(PLAD) and KrF excimer laser annealing, Dongkyu Lee, Sungkweon Baek, Changhee Cho, Sungho Heo and Hyunsang Hwang, Int. Conf. of Solid state device & Materials (SSDM) pp. 530, 2005.9. (CA,BK,samsung)
76
Effect of SiO2 underneath layer on LaAlO3 High Dielectric constant material for gate oxide application, Musarrat Hasan and Hyunsang Hwang, Int. Conf. of Solid state device & Materials (SSDM) pp. 490, 2005.9. (CA,NO)
75
Metal-Nitride(TiN) nanocrystals embeded in Al2O3 for charge trapping layer of nonvolatile memory devices, S.Choi, S.S.Kim,M.Chang,D.Y.Kim,H.Hwang, S.Jeon,C.Kim, 2005 GIST/KAIST/KU/TU joint symposium on advanced materials, pp.63, 2005.8.18~20. (CA)
74
Electrical characteristics of 1T/1R RRAM device usingg ZrOx, Hyejung Choi, Dongsoo Lee, Yunik Son and Hyunsang Hwang, MRS Spring meeting, Symposium Proceeding 2005.4
73
Fabrication of n+p junction diode using plasma doping followed by low temperature annealing, Kiju Im, Won-ju Cho, Chang-Geun Ahn, Jong-Heon Yang, In-Bok Baek, Seongjae Lee, Sungkweon Baek and Hyunsang Hwang, MRS Spring meeting, Symposium Proceeding 2005.4
72
Germanium ultra-shallow n+p junction formed by low energy plasma doping and laser annealing, Sungheo heo, Sungkweon Baek, Dongkyu Lee, Hyunsuk Jung and Hyunsang Hwang, MRS Spring meeting, Symposium Proceeding 2005.4
71
Study of the Hydrogen effect on dopant activation for the plasma doping and ion implantation, Sungkweon Baek, Sungheo Heo, Dongkyu Lee, Won-Ju Cho, Kiju Im, Chang-Geun Ahn, Jong-Heon Yang, In-Bok Baek, Seongjae Lee and Hyunsang Hwang, MRS Spring meeting, Symposium Proceeding 2005.4 ring
70
 High work-function metal gate and high-k dielectric for charge trap flash memory device applications, S. Jeon, J. H. Han, J. Lee, C. J. Choi, S. Choi, H. Hwang, and C. Kim, 2005 ESSDERC, pp. 325, Sep. 2005 (ETC, NO)
69
 Effect of high pressure deuterium annealing on electrical and reliability characteristics of MOSFETs with high-k gate dielectric, H. Park, M. S. Rahman, M. Chang, B. H. Lee, M. Gardner, C. D. Young, H. Hwang, 43rd Annual International Reliability Physics Symposium, pp. 646-647, 2005.06 (CA, BK 21, System IC 2010)
68
The impact of work-function of metal gate and fixed oxide charge of high-k blocking dielectric on memory properties of NAND engine charge trap flash memroy devices, S. Jeon, J. H. Han, J. Lee, J. Hyun, J. H. Kim, Y. S. Jeong, H. S. Chae, S. D. Chae, M. K. Kim, J. W. Lee, S. Choi, M. Jang, H. Hwang, C. Kim, 63rd Annual Device Research Conference, pp. 39-40, 2005.06 (ETC, NO)