Semiconductor Integrated Device & Process Lab.


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Understanding of the Abrupt Resistive Transition in Different types of Threshold Switching Devices from Materials Perspective / Sangmin Lee , Jongmyung Yoo , Jaehyuk Park , Hyunsang Hwang / IEEE Transactions on Electron Devices 67(7),9115221, pp. 2878-2883 (202007) 


Experimental Determination of the Tunable Threshold Voltage Characteristics in a AgₓTe₁₋ₓ/Al₂O₃/TiO₂-Based Hybrid Memory Device ​/ Changhyuck Sung, Seokjae Lim, Hyunsang Hwang / IEEE Electron Device Letters 41(5),9027923, pp. 713-716​ (202005)


Excellent synaptic behavior of lithium-based nano-ionic transistor based on optimal WO2.7 stoichiometry with high ion diffusivity / Jongwon Lee, Revannath Dnyandeo Nikam, Seokjae Lim, Myonghoon Kwak, Hyunsang Hwang ​/ Nanotechnology 31(23), pp. 235203 (202003)


Controlled Ionic Tunneling in Lithium Nanoionic Synaptic Transistor through Atomically Thin Graphene Layer for Neuromorphic Computing / Revannath Dnyandeo Nikam, Myonghoon Kwak, Jongwon Lee, Krishn Gopal Rajput, Hyunsang Hwang ​/ Advanced Electronic Materials6(2),1901100​ (202002)


Engineering of defects in resistive random access memory devices /  Writam Banerjee,  Qi Liu, and  Hyunsang Hwang / Journal of Applied Physics 127(5),051101 (202002) 


Evolution of 0.7 conductance anomaly in electric field driven ferromagnetic CuO junction based resistive random access memory devices /  Writam Banerjee, Hyunsang Hwang / Applied Physics Letters 116(5),053502 (202002) 


Threshold Voltage Drift in Te-Based Ovonic Threshold Switch Devices Under Various Operation Conditions / Jongmyung Yoo, Ilya Karpov, Sangmin Lee, Jaimyun Jung, Hyoung Seop Kim, Hyunsang Hwang / IEEE Electron Device Letters 41(1),8924678, pp. 191-194 (202001) 


Near ideal synaptic functionalities in Li ion synaptic transistor using Li3POxSex electrolyte with high ionic conductivity /Revannath Dnyandeo Nikam, Myonghoon Kwak, Jongwon Lee, Krishn Gopal Rajput, Writam Banerjee, Hyunsang Hwang​/​ Scientific Reports 9(1),18883​​ (201912)


Field-induced nucleation switching in binary ovonic threshold switches / Sangmin Lee,  Jongmyung Yoo, Jaehyuk Park, and  Hyunsang Hwang / Applied Physics Letters 115(23), 233503 (201912)


Structural engineering of Li based electronic synapse for high reliability / Yunseok Choi, Chuljun Lee, Myungjun Kim, Yubin Song, Hyunsang Hwang, Daeseok Lee / IEEE Electron Device Letters 40(12), pp. 1992 - 1995 (201912)


Ferroelectric materials for neuromorphic computing / S. Oh, H. Hwang, and I. K. Yoo / APL Materials 7(9),091109 (201909) 


Quantized Conduction Device with 6‐Bit Storage Based on Electrically Controllable Break Junctions / Writam Banerjee, Hyunsang Hwang / Advanced Electronic Materials 1900744 (201909) 


One transistor-two resistive RAM device for realizing bidirectional and analog neuromorphic synapse devices / Seokjae Lim, Myounghoon Kwak, and Hyunsang Hwang / Nanotechnology 30 (2019) 455201 (201908) 


Microstructural engineering in interface-type synapse device for enhancing linear and symmetric conductance changes / Jaesung Park, Chuljun Lee, Myonghoon Kwak, Solomon Amsalu Chekol, Seokjae Lim, Myungjun Kim, Jiyong Woo, Hyunsang Hwang, Daeseok Lee / Nanotechnology  30(30),305202 (6pp) (201907) 


Improved Endurance of HfO2-based Metal-Ferroelectric-Insulator-Silicon structure by High-Pressure Hydrogen Annealing / Seungyeol Oh, Jeonghwan Song, In Kyeong Yoo, Hyunsang Hwang / IEEE Electron Device Letters 40(7),8706981, pp. 1092-1095 (201907) 


Stuck-at-Fault Tolerant Schemes for Memristor Crossbar Array-Based Neural Networks / Injune Yeo , Myonglae Chu , Sang-Gyun Gi , Hyunsang Hwang , and Byung-Geun Lee / IEEE Transactions on Electron Devices 66(7),8715385, pp. 2937-2945 (201907) 


3D Stackable and Scalable Binary Ovonic Threshold Switch Devices with Excellent Thermal Stability and Low Leakage Current for High‐Density Cross‐Point Memory Applications / Jongmyung Yoo, Seong Hun Kim, Solomon Amsalu Chekol, Jaehyuk Park, Changhyuck Sung, Jeonghwan Song, Donghwa Lee, Hyunsang Hwang / Advanced Electronic Materials 1900196 (201905)


Understanding of Proton Induced Synaptic Behaviors in Three–terminal Synapse Device for Neuromorphic Systems / Jongwon Lee, Seokjae Lim, Myonghoon Kwak, Jeonghwan Song and Hyunsang Hwang / Nanotechnology 30 (25) 255202 (6pp) (201904) 


Investigation of I−V Linearity in TaOx-Based RRAM Devices for Neuromorphic Applications / Changhyuck Sung, Andrea Padovani, Bastien Beltrando, Donguk Lee, Myunghoon Kwak, Seokjae Lim, Luca Larcher, Vincenzo Della Marca, Hyunsang Hwang / IEEE Journal of the Electron Devices Society  7, 8658233, pp. 404-408 (2019) 


An excellent performance of a C-Te OTS device with amorphous Ge interfacial layer for selector application / Solomon Amsalu Chekol, Jeonghwan Song, Jongmyung Yoo, Seokjae Lim, and Hyunsang Hwang / Applied Physics Letters 114(10),102106 (201903)