Semiconductor Integrated Device & Process Lab.


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Excellent data retention characteristic of Te-based conductive-bridge RAM using semiconducting Te filament for storage class memory / Sangmin Lee, Jeonghwan Song, Seokjae Lim, Solomon Amsalu Chekol, Hyunsang Hwang / Solid-State Electronics  153, pp. 8-11 (201903)


Hardware implementation of neural network using pre-programmed resistive device for pattern recognition / Wooseok Choi, Kibong Moon, Myonghoon Kwak, Changhyuck Sung, Jongwon Lee,Jeonghwan Song, Jaesung Park, Solomon Amsalu Chekol, Hyunsang Hwang / Solid-State Electronics  153, pp. 79-83 (201903) 


W/WO3-x based three-terminal synapse device with linear conductance change and high on/off ratio for neuromorphic application / Jinwon Go, Yonghun Kim, Myonghoon Kwak, Jeonghwan Song, Solomon Amsalu Chekol, Jung-Dae Kwon and Hyunsang Hwang / Applied Physics Express 12(2),026503 (201902)


NbO2-based frequency storable coupled oscillators for associative memory application / Donguk Lee, Euijun Cha, Jaehyuk Park, Changhyuck Sung, Kibong Moon, Solomon Amasalu Chekol, and Hyunsang Hwang /  IEEE Journal of the Electron Devices Society 6(1), pp. 250-253  (201812)


Bidirectional Non-Filamentary RRAM as an Analog Neuromorphic Synapse, Part I: Al/Mo/Pr0.7Ca0.3MnO3 Material Improvements and Device Measurements / Kibong Moon, Alessandro Fumarola, Severin Sidler, Junwoo Jang, Pritish Narayanan, Robert M Shelby, Geoffrey W Burr, Hyunsang Hwang /  IEEE Journal of the Electron Devices Society 6(1),8168326, pp. 146-155 (201812) 

Bidirectional Non-Filamentary RRAM as an Analog Neuromorphic Synapse, Part II: Impact of Al/Mo/Pr0.7Ca0.3MnO3 Device Characteristics on Neural Network Training Accuracy / Alessandro Fumarola, Severin Sidler, Kibong Moon, Junwoo Jang, Robert M Shelby, Pritish Narayanan, Yusuf Leblebici, Hyunsang Hwang, Geoffrey W Burr /  IEEE Journal of the Electron Devices Society 6(1),8171732, pp. 169-178 (201812)
Reliable Ge2Sb2Te5‐Integrated High‐Density Nanoscale Conductive Bridge Random Access Memory using Facile Nitrogen‐Doping Strategy / Niloufar Raeis‐Hosseini, Seokjae Lim, Hyunsang Hwang, Junsuk Rho / Advanced Electronic Materials 4(11),1800360 (201811)

Perspective: A review on memristive hardware for neuromorphic computation / Changhyuck Sung,  Hyunsang Hwang, and  In Kyeong Yoo / Journal of Applied Physics  124(15),151903 (201810)


Implementation of Convolutional Kernel Function Using 3-D TiOx Resistive Switching Devices for Image Processing  / Myonghoon Kwak , Jaesung Park , JiyongWoo , and Hyunsang Hwang / IEEE Transactions on Electron Devices  65(10), 8435959, pp. 4716-4718  (201810) 


Improved Synaptic Behavior of CBRAM using Internal Voltage Divider for Neuromorphic Systems / Seokjae Lim , Myounghoon Kwak , and Hyunsang Hwang / IEEE Transactions on Electron Devices 65(9),8424473, pp. 3976-3981  (201809) 


Modeling and System-Level Simulation for Non-Ideal Conductance Response of Synaptic Devices / Sang-Gyun Gi , Injune Yeo, Myonglae Chu, Kibong Moon , Hyunsang Hwang , and Byung-Geun Lee / IEEE Transactions on Electron Devices  65(9),8424206, pp. 3996-4003   (201809​)


Zn1−xTex Ovonic Threshold Switching Device Performance and its Correlation to Material Parameters / Yunmo Koo, Hyunsang Hwang / Scientific Reports  8(1),11822 (201808) 


Hybrid Selector with Excellent Selectivity and Fast Switching Speed for X-point memory array / Jaehyuk Park , Jongmyung Yoo , Jeonghwan Song , Changhyuck Sung , and Hyunsang Hwang /  IEEE Electron Device Letters  39(8), pp. 1171-1174   (201808) 

C-Te Based Binary OTS Device Exhibiting Excellent Performance and High Thermal Stability for Selector Application / Solomon Amsalu Chekol, Jongmyung Yoo, Jaehyuk Park, Jeonghwan Song, Changhyuck Sung and Hyunsang Hwang  / Nanotechnology 29(34),345202  (201808)

Steep Slope Field-Effect Transistors with B-Te based Ovonic Threshold Switch Device / Jongmyung Yoo, Donguk Lee, Jaehyuk Park, Jeonghwan Song, Hyunsang Hwang / IEEE Journal of the Electron Devices Society  6(1),8412090, pp. 821-824 (201807) 


Reliable Multivalued Conductance States in TaOx Memristors through Oxygen Plasma-Assisted Electrode Deposition with in Situ-Biased Conductance State Transmission Electron Microscopy Analysis  / Myoung-Jae Lee , Gyeong-Su Park, David H. Seo, Sung Min Kwon, Hyeon-Jun Lee, June-Seo Kim, MinKyung Jung , Chun-Yeol You , Hyangsook Lee, Hee-Goo Kim, Su-Been Pang, Sunae Seo, Hyunsang Hwang, and Sung Kyu Park  / ACS Applied Materials and Interfaces  10(35), pp. 29757-29765  (201807) 


Improved Synapse Device with MLC and Conductance Linearity using Quantized Conduction for Neuromorphic Systems / Seokjae Lim, Changhyuck Sung, Hyungjun Kim, Taesu Kim, Jeonghwan Song, Jae-Joon Kim, Hyunsang Hwang /  IEEE Electron Device Letters 39(2),8246549, pp. 312-315  (201802)


CMOS Compatible Low-Power Volatile Atomic Switch for Steep-Slope FET Devices / Seokjae Lim, Jongmyung Yoo, Jeonghwan Song, Jiyong Woo, Jaehyuk Park, and Hyunsang Hwang / Applied Physics Letters  113(3),033501 (201807) 


Effect of cation amount in the electrolyte on characteristics of Ag/TiO2 based threshold switching devices / Jongmyung Yoo, Jeonghwan Song and Hyunsang Hwang / Nanotechnology 29(36),365707 (201807) 

Ultrasensitive artificial synapse based on conjugated polyelectrolyte  / Wentao Xu, Thanh Luan Nguyen, Young-Tae Kim, Christoph Wolf, Raphael Pfattner, Jeffrey Lopez, Byeong-Gyu Chae, Sung-Il Kim, Moo Yeol Lee, Eul-Yong Shin, Yong-Young Noh, Joon Hak Oh, Hyunsang Hwang, Chan-Gyung Park, Han Young Woo, Tae-Woo Lee /  Nano Energy   48, pp. 575-581 (201806)