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1.
Optimized Programming Scheme Enabling Linear Potentiation in Filamentary HfO2 RRAM Synapse for Neuromorphic Systems / Jiyong Woo, Kibong Moon, Jeonghwan Song, Myounghoon Kwak, Jaesung Park, and Hyunsang Hwang, / IEEE TRANSACTIONS ON ELECTRON DEVICES 63(12), pp.5064-5067 (201612)
2.
TiOx-Based RRAM Synapse With 64-Levels of Conductance and Symmetric Conductance Change by Adopting a Hybrid Pulse Scheme for Neuromorphic Computing / Jaesung Park, Myunghoon Kwak, Kibong Moon, Jiyong Woo, Dongwook Lee, and Hyunsang Hwang, / IEEE Electron Device Letters 37 (12), 7725546, pp. 1559-1562 (201612)
3.
Atomic-scale quantification of interdiffusion and dopant localization in GeSbTe-based memory devices / B.-G. Chae, J.-B. Seol, J.-H. Song, W.-Y Jung, H. Hwang, and C.-G. Park, / Applied Physics Letters 109 (11), 112103 (201609)
4.
Improved Synaptic Behavior under Identical Pulses using AlOx/HfO2 Bilayer RRAM Array for Neuromorphic Systems / Jiyong Woo, Kibong Moon, Jeonghwan Song, Sangheon Lee, Myounghun Kwak, Jaesung Park, and Hyunsang Hwang, / IEEE Electron Device Letters 37 (8), 7496808, pp. 994-997 (201608)
5.
Analog Synapse Device with 5-bit MLC and Improved Data Retention for Neuromorphic System / Kibong Moon, Euijun Cha, Jaesung Park, Sanggyun Gi, Myonglae Chu, Kyungjoon Baek, Byunggeun Lee, Sang Ho Oh, and Hyunsang Hwang,/ IEEE Electron Device Letters 37 (8), 7497521, pp. 1067-1070 (201608)
6.
Steep Slope Field-Effect Transistors with Ag/TiO2-Based Threshold Switching Device / Jeonghwan Song, Jiyong Woo, Sangheon Lee, Amit Prakash, Jongmyung Yoo, Kibong Moon, and Hyunsang Hwang, / IEEE Electron Device Letters 37 (7), pp. 932-934 (201607)
7.
Communication-hourglass-shaped metal-filament switching device with multi-layer (AlOX/TiO2) oxide electrolytes / Seokjae Lim, Jiyong Woo, Sangheon Lee, Jaesung Park, and Hyunsang Hwang, / ECS Journal of Solid State Science and Technology 5 (9), pp. Q219-Q221 (201607)
8.
Multilevel Cell Storage and Resistance Variability in Resistive Random Access Memory / Amit Prakash, Hyunsang Hwang / Physical Sciences Reviews 1(6) (201606)
9.
Organic core-sheath nanowire artificial synapses with femtojoule energy consumption / Wentao Xu, Sung-Yong Min, Hyunsang Hwang, and Tae-Woo Lee, / Science advances 2(6), 150132, pp.1-7 (201606)
10.
Dynamics of electroforming and electrically driven insulator-metal transition in NbOx selector / Jaehyuk Park, Euijun Cha, Ilya Karpov, and Hyunsang Hwang / Applied Physics Letters 108 (23), 232101 (201606)
11.
Scalable Neuron Circuit Using Conductive-Bridge RAM for Pattern Reconstructions / Jun-Woo Jang, Behnoush Attarimashalkoubeh, Amit Prakash, Hyunsang Hwang, and Yoon-Ha Jeong, / IEEE Transactions on Electron Devices 63 (6), 7450157, pp. 2610-2613 (201606)
12.
Improved reset breakdown strength in a HfOx-based resistive memory by introducing RuOx oxygen diffusion barrier / Jaesung Park, Jiyong Woo, Amit Prakash, Sangheon Lee, Seokjae Lim and Hyunsang Hwang / AIP Advances 6(5), 055114 (201605)
13.
Comprehensive Assessment of a Back-to-Back Schottky Diode with Ultrathin TiO2 Layer for Cross-Point Selector Applications / Jiyong Woo and Hyunsang Hwang / ECS Journal of Solid State Science and Technology 5 (6) Q188-Q190 (201604)
14.
Effects of High-Pressure Hydrogen Annealing (HPHA) on Reliability Characteristics of RRAM  / Jeonghwan Song, Daeseok Lee, Jiyong Woo, Euijun Cha, Sangheon Lee, and Hyunsang Hwang / Journal of Nanoscience and Nanotechnology 16(5), 4758-4761  (201605)
15.
Retention modeling for ultra-thin density of Cu-based conductive bridge random access memory (CBRAM) / Fekadu Gochole Aga, Jiyong Woo, Sangheon Lee, Jeonghwan Song, Jaesung Park, Jaehyuk Park, Seokjae Lim, Changhyuck Sung, and Hyunsang Hwang / AIP Advances 6 (2), 025203 (201602)
16.
Comprehensive scaling study of NbO2 insulator-metal-transition selector for cross point array application / Euijun Cha, Jaehyuk Park, Jiyong Woo, Daeseok Lee, Amit Prakash, and Hyunsang Hwang / Applied Physics Letters 108 (15), 153502 (201604)
17.
Introduction of WO3 Layer in a Cu-based Al2O3 Conductive Bridge RAM System for Robust Cycling and Large Memory Window / Jiyong Woo, Attilio Belmonte, Augusto Redolfi, Hyunsang Hwang, Malgorzata Jurczak, and Ludovic Goux / IEEE Journal of the Electron Devices Society  4 (3), 7400894, pp. 163-166 (201605)
18.
Communication—Impact of Filament Instability in an Ag2S-Based Conductive-Bridge RAM for Cross-Point Selector Applications / Jiyong Woo and Hyunsang Hwang / ECS Journal of Solid State Science and Technology 5 (3), Q98-Q100 (201601)
19.
Role of Local Chemical Potential of Cu on Data Retention Properties of Cu-Based Conductive-Bridge RAM / Jiyong Woo, Attilio Belmonte, Augusto Redolfi, Hyunsang Hwang, Malgorzata Jurczak, and Ludovic Goux / IEEE Electron Device Letters  37 (2), 7355331, pp. 173-175 (201602)