ABMI
  • SIDP : Semiconductor intergrated device & process
  • Home > Publication > Papers > Journals
Publication
        - Invited talk
        - Journals
        - Conferences
        - Books or Magazines
Papers
2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 2008 2007 2006 2005 2004 2003 2002 2001 2000


1.
Switching mechanism of Al/La1−xSrxMnO3 resistance random access memory. I. Oxygen vacancy formation in perovskites / Nodo Lee,   Yves Lansac,   Hyunsang Hwang and   Yun Hee Jang*  / RSC Advances 2015,5, 102772-102779, Issue 124 (201511)
2.
Threshold switching behavior of Ag-Si based selector device and hydrogen doping effect on its characteristics / Jongmyung Yoo, Jiyong Woo, Jeonghwan Song, and Hyunsang Hwang, / AIP ADVANCES 5(12), 127221 (201512)
3.
A study of threshold switching of NbO2 using atom probe tomography and transmission electron microscopy / J.H. Lee, E.J. Cha, Y.T. Kim, B.K. Chae, J.J. Kim, S.Y. Lee, H.S. Hwang, C.G. Park∗ / Micron  Volume 79, Pages 101–109 (201512)
4.
The band-gap energy dependence of metal oxides on non-linear characteristics in the HfO<inf>2</inf>-based resistive random access memory / Sangheon Lee, Daeseok Lee, Jiyong Woo, Euijun Cha, Jaesung Park, Kibong Moon, Jeonghwan Song, Hyunsang Hwang / Microelectronic Engineering 147, pp. 321-324 (201511)
5.
Improved threshold switching characteristics of multi-layer NbOx for 3-D selector application / Jaehyuk Park, Euijun Cha, Daeseok Lee, Sangheon Lee, Jeonghwan Song, Jaesung Park, Hyunsang Hwang / Microelectronic Engineering 147, pp. 318-320 (201511)
6.
Experimental demonstration and tolerancing of a large-scale neural network (165,000 synapses), using phase-change memory as the synaptic weight element  / Geoffrey W. Burr, Robert M. Shelby, Severin Sidler, Carmelo di Nolfo, Junwoo Jang, Irem Boybat, Rohit S. Shenoy, Pritish Narayanan, Kumar Virwani, Emanuele U. Giacometti, Bülent N. Kurdi, and Hyunsang Hwang, /  IEEE Transactions on Electron Devices 62(11), 3498-3507 (201511)
7.
Bidirectional threshold switching in engineered multilayer (Cu2O/Ag:Cu2O/Cu2O) stack for cross-point selector application / Jeonghwan Song, Amit Prakash, Daeseok Lee, Jiyong Woo, Euijun Cha, Sangheon Lee, and Hyunsang Hwang / Applied Physics Letters 107 (11), 113504 (201509)
8.
Resistance controllability and variability improvement in a TaOx-based resistive memory for multilevel storage application / A. Prakash, D. Deleruyelle, J. Song, M. Bocquet, and H. Hwang / Applied Physics Letters 106(23), 233104 (201506)
9.
Electronic system with memristive synapses for pattern recognition / Sangsu Park, Myonglae Chu, Jongin Kim, Jinwoo Noh, Moongu Jeon, Byoung Hun Lee, Hyunsang Hwang, Boreom Lee, Byung-geun Lee / Scientific Reports 5, 10123 (201505)
10.
Effects of N-Doped GeSbTe Buffer Layer on Switching Characteristics of Cu/Al2O3-Based CBRAM / Seokjae Lim, Sangheon Lee, Jiyong Woo, Daeseok Lee, Amit Prakash and Hyunsang Hwang / ECS Solid State Letters 4 (7), pp. Q25-Q28 (201505)
11.
Threshold Selector with High Selectivity and Steep Slope for Cross-point Memory Array / Jeonghwan Song, Jiyong Woo, Amit Prakash, Daeseok Lee, and Hyunsang Hwang / IEEE Electron Device Letters  36 (7) , 681-683 (201507)
12.
Optimization of Conductance Change in Pr1−xCaxMnO3-Based Synaptic Devices for Neuromorphic Systems / Jun-Woo Jang, Sangsu Park, Geoffrey W. Burr, Hyunsang Hwang, and Yoon-Ha Jeong / IEEE Electron Device Letters 36 (5), 7078840, pp. 457-459 (201505)
13.
Neuromorphic Hardware System for Visual Pattern Recognition with Memristor Array and CMOS Neuron / Myonglae Chu, Byoungho Kim, Sangsu Park, Hyunsang Hwang, Moongu Jeon, Byoung Hun Lee, Byung-Geun Lee / IEEE Transactions on Industrial Electronics 62 (4), 6894575, pp. 2410-2419 (201504)
14.
Comprehensive analysis of electro thermally driven nanoscale insulator-metal transition SmNiO3-based selector for cross-point memory array / Saiful Haque Misha, Nusrat Tamanna, Amit Prakash, Jeonghwan Song, Daeseok Lee, Euijun Cha and Hyunsang Hwang / Japanese Journal of Applied Physics 54 (4), 04DD09 (201504)
15.
Trade-off between number of conductance states and variability of conductance change in Pr0.7Ca0.3MnO3-based synapse device / Daeseok Lee, Kibong Moon, Jaesung Park, Sangsu Park, and Hyunsang Hwang / Applied Physics Letters 106 (11), 113701 (201503)
16.
Accelerated Retention Test Method by Controlling Ion Migration Barrier of ReRAM / Yunmo Koo, Stefano Ambrogio, Jiyong Woo, Jeonghwan Song, Daniele Ielmini, and Hyunsang Hwang / IEEE Electron Device Letters 36 (3), 7015563, pp. 238-240 (201503)
17.
Effect of nitrogen doping on variability of TaOx-RRAM for low-power 3-bit MLC applications / Saiful Haque Misha, Nusrat Tamanna, Jiyong Woo, Sangheon Lee, Jeonghwan Song, Jaesung Park, Seokjae Lim, Jaehyuk Park, and Hyunsang Hwang / ECS Solid State Letters  4(3) P25-P28 (201501)
18.
Structurally Engineered Stackable and Scalable 3D Titanium-oxide Switching devices for High-density Nanoscale Memory / Daeseok Lee, Jaesung Park, Jaehyuk Park, Jiyong Woo, Euijun Cha, Sangheon Lee, Kibong Moon, Jeonghwan Song, Yunmo Koo andHyunsang Hwang / Advanced Materials 27(1), p59-64 (201501)
19.
Effect of AC pulse overshoot on non-linearity and reliability of selector-less resistive random access memory in AC pulse operation / Sangheon Lee, Jeonghwan Song, Daeseok Lee, Jiyong Woo, Euijun Cha, Hyunsang Hwang / Solid-State Electronics 104, 70-4 (201502)
20.
Demonstration of low power 3-bit multi-level cell characteristics in a TaOx-based RRAM by stack engineering / Amit Prakash, Jaesung Park, Jeonghwan Song, Jiyong Woo, Eui-Jun Cha, and Hyunsang Hwang / IEEE Electron Device Letters 36(1), pp.32-34 (201501)