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1.
Hardware implementation of associative memory characteristics with analogue-type resistive-switching device / Kibong Moon, Sangsu Park, Junwoo Jang, Daeseok Lee, Jiyong Woo, Euijun Cha, Sangheon Lee, Jaesung Park, Jeonghwan Song, Yunmo Koo and Hyunsang Hwang / Nanotechnology 25 (49) , art. no. 495204  (201412)
2.
Stepwise set operation for reliable switching uniformity and low operating current of ReRAMs  / Sangheon Lee, Jiyong Woo , Daeseok Lee , Euijun Cha , Hyunsang Hwang / Solid-State Electronics 102, pp. 42-45 (201412)
3.
Engineering oxygen vacancy of tunnel barrier and switching layer for both selectivity and reliability of selector-less ReRAM / Sangheon Lee, Daeseok Lee, Jiyong Woo, Euijun Cha, Jaesung Park, and Hyunsang Hwang / IEEE Electron Device Letters 35 (10), 6891220, pp. 1022-1024 (201410)
4.
A nitrogen-treated memristive device for tunable electronic synapses / Sangsu Park, Manzar Siddik, Jinwoo Noh, Daeseuk Lee, Kibong moon, Jiyong Woo, Byoung Hun Lee, and Hyunsang Hwang / Semiconductor Science and Technology 29(10), pp. 104006-104010(5) (201410)
5.
Highly Non-Linear Nitrogen Doped ZnO Based Selector Device for Cross-Point Array / Nusrat Tamanna, Saiful Haque Misha, Amit Prakash, Jeonghwan Song, Daeseok Lee, Jiyong Woo, Jaesung Park and Hyunsang Hwang / ECS Solid State Letters  3 (10), pp. P117-P119 (201409)
6.
Effects of High-Pressure Hydrogen Annealing on the Formation of Conducting Filaments in Filament-Type Resistive Random-Access Memory  / Daeseok Lee, Jiyong Woo, Euijun Cha, Sangheon Lee, Hyunsang Hwang /  Journal of Electronic Materials 43 (9), pp. 3635-3639 (201409)
7.
Non-linear I-V characteristics of TiOy film by optimizing thickness and trap density for selector-less ReRAM  / Nusrat Tamanna, Saiful Haque Misha, Amit Prakash, Daeseok Lee, Jiyong Woo, Euijun Cha, Behnoush Attarimashalkoubeh, Jeonghwan Song, Sangheon Lee, Kibong Moon, and Hyunsang Hwang / ECS Solid State Letters  3 (10), pp. P117-P119 (201407)
8.
Effects of Ti buffer layer on retention and electrical characteristics of Cu-based conductive-bridge random access memory (CBRAM)  / Behnoush Attarimashalkoubeh, Amit Prakash, Sangheon Lee, Jeonghwan Song, Jiyong Woo, Saiful Haque Misha, Nusrat Tamanna, and Hyunsang Hwang / ECS Solid State Letters  3 (10), pp. P120-P122 (201407)
9.
Internal Resistor of Multi-Functional Tunnel Barrier for Selectivity and Switching Uniformity in Resistive Random Access Memory  / Sangheon Lee, Jiyong Woo, Daeseok Lee, Euijun Cha, and Hyunsang Hwang / Nanoscale Research Letters  2014, 9:364 (201407)
10.
Access devices for 3D crosspoint memory / Geoffrey W. Burr, Rohit S. Shenoy, Kumar Virwani, Pritish Narayanan, Alvaro Padilla, and Bulent Kurdi, Hyunsang Hwang, / Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures  32(4), 040802-1~23 (201407)
11.
Low-temperature spin-on-glass method involving high-pressure annealing for filling high-aspect-ratio structures  / Daeseok Lee, Jiyong Woo, Sangsu Park, Euijun Cha, Sangheon Lee, and Hyunsang Hwang / Japanese Journal of Applied Physics  53 (6), 068007 (201406)
12.
Effects of RESET Current Overshoot and Resistance State on Reliability of RRAM / Jeonghwan Song, Daeseok Lee, Jiyong Woo, Yunmo Koo, Euijun Cha, Sangheon Lee, Jaesung Park, Kibong Moon, Saiful Haque Misha, Amit Prakash, and Hyunsang Hwan / IEEE Electron Device Letters 35 (6), 6800048, pp. 636-638 (201406)
13.
Neuromorphic Character Recognition System With Two PCMO Memristors as a Synapse / Ahmad Muqeem Sheri, Hyunsang Hwang, Moongu Jeon, Byung-geun Lee / IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS 61(6), pp.2933-2941(2014.06)
14.
Dependence of reactive metal layer on resistive switching in a bi-layer structure Ta/HfOx filament type resistive random access memory / Daeseok Lee, Jiyong Woo, Sangsu Park, Euijun Cha, Sangheon Lee, and Hyunsang Hwang, / Applied Physics Letters  104(8), 083507 (2014.02)
15.
Tunnel Barrier Engineering of Titanium Oxide for High Non-Linearity of Selector-less Resistive Random Access Memory / Sangheon Lee, Jiyong Woo, Daeseok Lee, Euijun Cha, Jaesung Park, Kibong Moon, Jeonghwan Song, Yunmo Koo, Hyunsang Hwang / Applied Physics Letters  104(5), 052108 (2014.02)
16.
Optimized Lightning-rod Effect to Overcome Trade-off between Switching Uniformity and On/off Ratio in ReRAM / Daeseok Lee, Jeonghwan Song, Jiyong Woo, Jaesung Park, Sangsu Park, Euijun Cha, Sangheon Lee, Yunmo Koo, Kibong Moon, and Hyunsang Hwang, / IEEE Electron Device Letters VOL. 35, NO. 2, pp.214-216 (2014.02)
17.
Control of Cu Conductive Filament in Complementary Atom Switch for Cross-point Access Device Application / Jiyong Woo, Daeseok Lee, Euijun Cha, Sangheon Lee, Sangsu Park, and Hyunsang Hwang, / IEEE Electron Device Letters 35(1), pp. 60-62 (2014.01)