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1.
Vertically Stacked ReRAM Composed of a Bidirectional Selector and CB-RAM for Cross-point Array Applications / Jiyong Woo, Daeseok Lee, Euijun Cha, Sangheon Lee, Sangsu Park, and Hyunsang Hwang, / IEEE Electron Device Letters 34 (12), pp. 1512-1514 (2013.12)
2.
Highly reliable resistive switching without an initial forming operation by defect engineering / Sangheon Lee, Daeseok Lee, Jiyong Woo, Euijun Cha, Jaesung Park, Jeonghwan Song, Kibong Moon, Yunmo Koo, Behnoush Attari, Nusrat Tamanna, Misha Saiful Haque, and Hyunsang Hwang / IEEE Electron Device Letters 34 (12), pp. 1515-1517 (2013.12)
3.
Multilayer-oxide-based bidirectional cell selector device for cross-point resistive memory applications / Jiyong Woo, Daeseok Lee, Euijun Cha, Sangheon Lee, Sangsu Park, and Hyunsang Hwang, / Applied Physics Letters  103 (20) , art. no. 202113  (2013.11)
4.
Defect engineering using bi-layer structure in filament type ReRAM / Daeseok Lee, Jiyong Woo, Euijun Cha, Sangsu Park, Sangheon Lee, Jaesung Park, and Hyunsang Hwang / IEEE Electron Device Letters 34 (10) , art. no. 6594832 , pp. 1250-1252 (2013.10)
5.
Nanoscale RRAM-based synaptic electronics: toward a neuromorphic computing device / Sangsu Park, Jinwoo Noh, Myung-lae Choo, Sheri Ahmad Muqeem, Man Chang, Young-Bae Kim, Kim Chang Jung, Moongu Jeon, Byung-Geun Lee, Hyunsang Hwang, Lee Byoung Hun, / Nanotechnology 24 (38) , art. no. 384009 (2013.09)
6.
Selector-less RRAM with non-linearity of device for cross-point array applications  / Jiyong Woo, Daeseok Lee, Godeuni Choi, Euijun Cha, Seonghyun Kim, Wootae Lee, Sangsu Park, Hyunsang Hwang, / Microelectronic Engineering 109 , pp. 360-363 (2013.09)
7.
Interface engineering for low power and uniform resistive switching in bi-layer structural filament type ReRAM  / Daeseok Lee, Jiyong Woo, Euijun Cha, Seonghyun Kim, Wootae Lee, Sangsu Park, Hyunsang Hwang, / Microelectronic Engineering 109 , pp. 385-388 (2013.09)
8.
Hydrogenated IGZO thin-film transistors using high-pressure hydrogen annealing  / Se-I Oh, Godeuni Choi, Hyunsang Hwang, Wu Lu, Jae-Hyung Jang, / IEEE Transactions on Electron Devices  60 (8) , art. no. 6547707 , pp. 2537-2541 (2013.08)
9.
Threshold-Switching Characteristics of a Nanothin-NbO2-layer-based Pt/NbO2/Pt stack for Use in Cross-point-type Resistive Memories / Seonghyun Kim, Jubong Park, Jiyong Woo, Chunhum Cho, Wootae Lee, Jungho Shin, Godeuni Choi, Sangsu Park, Daeseok Lee, Byoung Hun Lee, Hyunsang Hwang, / Microelectronic Engineering 107 , pp. 33-36 (2013.07)
10.
Thermally-activated device non-linearity in resistance-switching memory for cross-point array applications / Jiyong Woo, Seonghyun Kim, Wootae Lee, Daeseok Lee, Sangsu Park, Godeuni Choi, Euijun Cha, Hyunsang Hwang,  / Applied Physics Letters  102 (12) , art. no. 122115 (2013.03)
11.
Effects of high-pressure annealing on random telegraph signal noise characteristic of source follower block in CMOS image sensor / Hyuk-Min Kwon, In-Shik Han, Sung-Kyu Kwon, Jae-Hyung Jang, Ho-Young Kwak, Woon-Il Choi, Man-Lyun Ha, Ju-Il Lee, Hyun-sang Hwang, and Hi-Deok Lee / IEEE Electron Device Letters 34 (2) , art. no. 6407727 , pp. 190-192 (2013.02)
12.
Complementary Resistive Switching in Niobium Oxide-Based Resistive Memory Devices / Xinjun Liu, Sharif Md. Sadaf, Sangsu Park, Seonghyun Kim, Euijun Cha, Daeseok Lee, Gun-Young Jung, and Hyunsang Hwang / IEEE Electron Device Letters 34 (2) , art. no. 6410339 , pp. 235-237 (2013.02)