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1.
Programmable analogue circuits with multilevel memristive device  / S. Park, J. Park, S. Kim, W. Lee, B.H. Lee and H. Hwang / Electronics Letters 48 (22) , pp. 1415-1417 (2012.10)
2.
Self-formed Schottky barrier induced selector-less RRAM for cross-point memory applications  / Sangsu Park, Seungjae Jung, Manzar Siddik, Minseok Jo, Jubong Park, Seonghyun Kim, Wootae Lee, Jungho Shin, Daeseok Lee, Godeuni Choi, Jiyong Woo, Euijun Cha, Byoung Hun Lee, Hyunsang Hwang / Physica Status Solidi - Rapid Research Letters 6 (11) , pp. 454-456 (2012.11)
3.
Improvement of resistive switching uniformity by introducing a thin NbOx interface layer / Xinjun Liu, Sharif Md. Sadaf, Seonghyun Kim, Kuyyadi P. Biju, Xun Cao, Myungwoo Son, Sakeb Hasan Choudhury, Gun-Young Jung and Hyunsang Hwang / ECS Solid State Letters 1 (5), pp. Q35-Q38 (2012.08)
4.
High Current Density and Nonlinearity Combination of Selection Device Based on TaOX/TiO2/TaOX Structure for One Selector-One Resistor Arrays / Wootae Lee , Jubong Park , Seonghyun Kim , Jiyong Woo , Jungho Shin , Godeuni Choi , Sangsu Park , Daeseok Lee , Euijun Cha , Byoung Hun Lee , and Hyunsang Hwang / ACS Nano 6 (9), pp 8166–8172 (2012.09)
5.
Defect engineering: Reduction effect of hydrogen atom impurities in HfO 2-based resistive-switching memory devices  / Seonghyun Kim, Daeseok Lee, Jubong Park, Seungjae Jung, Wootae Lee, Jungho Shin, Jiyong Woo, Godeuni Choi and Hyunsang Hwang / Nanotechnology 23 (32) , art. no. 325702 (2012.08)
6.
A study of the leakage current in TiN/HfO2/TiN capacitors  / S. Cimino, A. Padovani, L. Larcher, V.V. Afanasev, H.J. Hwang, Y.G. Lee, M. Jurczac, D. Wouters, B.H. Lee, H. Hwang, L. Pantisano / Microelectronic Engineering 95 , pp. 71-73 (2012.07)
7.
In-depth Study on the Effect of Active Area Scale-down of Solution-processed TiOx / Seungjae Jung, Jaemin Kong, Tae-Wook Kim, Sunghoon Song, Kwanghee Lee, Takhee Lee, Hyunsang Hwang, and Sanghun Jeon / IEEE Electron Device Letters  33 (6) , art. no. 6186770 , pp. 869-871 (2012.06)
8.
Highly Uniform and Reliable Resistance Switching Properties in Bilayer WOx/NbOx RRAM Devices  / Sharif Md. Sadaf, Xinjun Liu, Myungwoo Son, Sangsu Park, Sakeb H. Choudhury, Euijun Cha, Manzar Siddik, Jungho Shin, Hyunsang Hwang / Physica Status Solidi (A) Applications and Materials Science 209 (6) , pp. 1179-1183 (2012.06)
9.
Self-selective Characteristics of Nanoscale VOx Devices for High-density ReRAM Applications / Myungwoo Son, Xinjun Liu, Sharif Md. Sadaf, Daeseok Lee, Sangsu Park, Wootae Lee, Seonghyun Kim, Jubong Park, Jungho Shin, Seungjae Jung, Moon-Ho Ham, and Hyunsang Hwang / IEEE Electron Device Letters  33 (5), pp. 718-719 (2012.05)
10.
Improved Switching Variability and Stability by Activating a Single Conductive Filament / Jubong Park, Seungjae Jung, Wootae Lee, Seonghyun Kim, Jungho Shin, Daeseok Lee, Jiyong Woo, and Hyunsang Hwang / IEEE Electron Device Letters  33 (5), pp. 646 - 648 (2012.05)
11.
MIM-type cell selector for high-density and low-power cross-point memory application  / Jungho Shin, Godeuni Choi, Jiyong Woo, Jubong Park, Sangsu Park, Wootae Lee, Seonghyun Kim, Myungwoo Son, Hyunsang Hwang / Microelectronic Engineering  93, pp. 81-84 (2012.05)
12.
Improved switching uniformity in resistive random access memory containing metal-doped electrolyte due to thermally agglomerated metallic filaments / Wootae Lee, Jubong Park, Seonghyun Kim, Jiyong Woo, Jungho Shin, Daeseok Lee, Euijun Cha, Hyunsang Hwang / Applied Physics Letters 100 (14), art. no. 142106 (2012.04)
13.
Low-power and controllable memory window in Pt/Pr 0.7Ca 0.3MnO 3/yttria-stabilized zirconia/w resistive random-access memory devices / Xinjun X Liu, Kuyyadi P KP Biju, Jubong J Park, Sangsu S Park, Jungho J Shin, Insung I Kim, Sharif S Md Sadaf and Hyunsang H Hwang / Journal of Nanoscience and Nanotechnology 12 (4) , pp. 3252-3255 (2012.04)
14.
Operation Voltage Control in Complementary Resistive Switches Using Heterodevice  / Daeseok Lee, Jubong Park, Seungjae Jung, Godeuni Choi, Joonmyoung Lee, Seonghyun Kim, Jiyong Woo, Manzar Siddik, Eujun Cha, and Hyunsang Hwang / IEEE Electron Device Letters  33 (4), pp. 600-602 (2012.04)
15.
Ferroelectricity-induced resistive switching in Pb(Zr 0.52Ti 0.48)O 3/Pr 0.7Ca 0.3MnO 3/Nb-doped SrTiO 3 epitaxial heterostructure  / Sharif Md. Sadaf, El Mostafa Bourim, Xinjun Liu, Sakeb Hasan Choudhury, Dong-Wook Kim, and Hyunsang Hwang / Applied Physics Letters 100 (11) , art. no. 113505 (2012.03)
16.
Characterization of ZnO nanowire field effect transistors by fast hydrogen peroxide solution treatment / Taehyeon Kwon, Woojin Park , Minhyeok Choe, Jongwon Yoon, Sangsu Park, Sangchul Lee, Hyunsang Hwang, Takhee Lee / Japanese Joural of Applied Physics 51 (3 PART 1) , art. no. 035001 (2012.03)
17.
Co-occurrence of Threshold Switching and Memory Switching in Pt/NbOx/Pt Cells for Crosspoint Memory Applications / Xinjun Liu, Sharif Md. Sadaf, Myungwoo Son, Jubong Park, Jungho Shin, Wootae Lee, Kyungah Seo, Daeseok Lee, and Hyunsang Hwang, / IEEE Electron Device Letters  33 (2), pp. 236 - 238 (2012.02)