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1.
Highly asymmetric bipolar resistive switching in solution-processed Pt/TiO2/W devices for cross-point application / Kuyyadi P. Biju, Xinjun Liu, Jungho Shin, Insung Kim, Seungjae Jung, Manzar Siddik, Joonmyoung Lee, Alex Ignatiev, Hyunsang Hwang / Current Applied Physics 11 (4 SUPPL.), pp. S102-S106 (2011.07)
2.
Diode-less bilayer oxide (WOx–NbOx) device for cross-point resistive memory applications / Xinjun Liu, Sharif Md Sadaf, Myungwoo Son, Jungho Shin, Jubong Park, Joonmyoung Lee, Sangsu Park, Hyunsang Hwang / Nanotechnology 22 (47), art. no. 475702 (2011.11.25)
3.
Excellent resistive switching in nitrogen-doped Ge2Sb2Te5 devices for field-programmable gate array configurations /  Seonghyun Kim, Jubong Park , Seungjae Jung , Wootae Lee , Jiyong Woo , Chunhum Cho , Manzar Siddik , Jungho Shin , Sangsu Park , Byoung-Hun Lee , Hyunsang Hwang   / Applied Physics Letters 99 (19), art. no. 192110 (2011.11.07)
4.
Feasibility Study of Mo/SiOx/Pt Resistive Random Access Memory in Inverter Circuit for FPGA Applications / Sangsu Park, Jungho Shin, Salvatore Cimino, Seungjae Jung, Joonmyoung Lee, Seonghyun Kim, Jubong Park, Wootae Lee, Myungwoo Son, Byunghun Lee, Luigi Pantisano, and Hyunsang Hwang / IEEE Electron Device Letters  32 (12), art. no. 6056548, pp. 1665-1667 (2011.12)
5.
Proton Irradiation Effects on Resistive Random Access Memory With ZrOx/HfOx Stacks / Daeseok Lee, Joonmyoung Lee, Seungjae Jung, Seonghyun Kim, Jubong Park, K. P. Biju, Minhyeok Choe,
Takhee Lee, and Hyunsang Hwang / IEEE Transactions on Nuclear Science (TNS) VOL. 58, NO. 6(2011.12)
6.
Memristive switching behavior in Pr0.7Ca0.3MnO3 by incorporating oxygen deficient layer / Sangsu Park, Seungjae Jung, Manzar Siddik, Minseok Jo, Joonmyoung Lee, Jubong Park, Wootae Lee, Seonghyun Kim, Sharif Md. Sadaf, Xinjun Liu, Hyunsang Hwang / Rapid Research Letter in physica status solidi (RRL) Volume 5, Issue 10-11, pages 409–411 (2011.11). Cover Picture Article.
7.
Excellent Selector Characteristics of Nanoscale VO2 for High-density Bipolar ReRAM Applications / Myungwoo Son, Joonmyoung Lee, Jubong Park, Jungho Shin, Godeuni Choi, Seungjae Jung, Wootae Lee, Seonghyun Kim, Sangsu Park, and Hyunsang Hwang / IEEE Electron Device Letters  VOL. 32, NO. 11,1579-1581 (2011.11)
8.
Effect of Ge2Sb2Te5 Thermal Barrier on Reset Operations in Filament-engine Resistive Memory / Wootae Lee, Manzar Siddik, Seungjae Jung, Jubong Park, Seonghyun Kim, Jungho Shin, Joonmyoung Lee, Sangsu Park, Myungwoo Son, and Hyunsang Hwang / IEEE Electron Device Letters  VOL. 32, NO. 11. 1573-1575 (2011.11)
9.
Effect of interfacial oxide layer on the switching uniformity of Ge2Sb2Te5-based resistive change memory devices / Jiyong Woo, Seungjae Jung , Manzar Siddik , Euijun Cha , Sharif Md Sadaf , Hyunsang Hwang   / Applied Physics Letters 99, 162109 (2011.10.17)
10.
Flexible resistive random access memory using solution-processed TiOx with Al top electrode on Ag layer-inserted indium-zinc-tin-oxide-coated polyethersulfone substrate  / Seungjae Jung, Jaemin Kong, Sunghoon Song, Kwanghee Lee, Takhee Lee, Hyunsang Hwang, and Sanghun Jeon / Applied Physics Letters 99 (14), art. no. 142110 (2011.10.03)
11.
Characterization of Resistive Switching States in W/Pr0.7Ca0.3MnO3 for a Submicron ( 250 nm) Via-Hole Structure / Manzar Siddik, Kuyyadi P. Biju, Xinjun Liu, Joonmyoung Lee, Insung Kim, Seonghyun Kim, Wootae Lee, Seungjae Jung, Daeseok Lee, Sharif Sadaf, and Hyunsang Hwang / Japanese Journal of Applied Physics  50 (2011) 105802 (4 pages) (2011.10)
12.
Resistive switching characteristics and mechanism of thermally grown WOx thin films  / Kuyyadi P. Biju, Xinjun Liu, Manzar Siddik, Seonghyun Kim, Jungho Shin, Insung Kim, Alex Ignatiev, and Hyunsang Hwang / Journal of Applied Physics 110 (6), art. no. 064505 (2011.09.15)
13.
Parallel memristive filaments model applicable to bipolar and filamentary resistive switching / Xinjun Liu (榆), Kuyyadi P. Biju, Joonmyoung Lee, Jubong Park, Seonghyun Kim, Sangsu Park, Jungho Shin, Sharif Md. Sadaf,  Hyunsang Hwang / Applied Physics Letters 99 (11), art. no. 113518 (2011.09.12)
14.
Electrical characteristics of wrinkle-free graphene formed by laser graphitization of 4H-SiC / Hyeon Jun Hwang, Chunhum Cho, Sung Kwan Lim, Seung Yong Lee, Chang Goo Kang, Hyunsang Hwang, and Byoung Hun Lee / Applied Physics Letters 99 (8), art. no. 082111 (2011.08.22)
15.
Thermally Assisted Resistive Switching in Pr0.7Ca0.3MnO3 /Ti/Ge2Sb2Te5 Stack for Nonvolatile Memory Applications / Manzar Siddik, Seungjae Jung , Jubong Park , Wootae Lee , Seonghyun Kim , Joonmyoung Lee , Jungho Shin , Sangsu Park , Daeseok Lee , Insung Kim , Hyunsang Hwang  / Applied Physics Letters 99, 063501 (2011.08.08)
16.
Low temperature solution-processed graphene oxide/Pr0.7Ca0.3MnO3 based resistive-memory device  / Insung Kim, Manzar Siddik, Jungho Shin, Kuyyadi P Biju, Seungjae Jung, Hyunsang Hwang / Applied Physics Letters 99, 042101 (2011.07.25)
17.
Estimation of Interfacial Fixed Charge at Al2O3/SiO2 Using Slant-Etched Wafer for Solar Cell Application  / Youngkyoung Ahn, Sakeb Hasan Choudhury, Daeseok Lee, Sharif Md. Sadaf, Manzar Siddik, Minseok Jo, Hyunsang Hwang, Sungeun Park, Young Do Kim, Dong Hwan Kim / Japanese Journal of Applied Physics  50 (7 PART 1), art. no. 071503 (2011.07)
18.
Improved resistive switching properties in Pt/Pr0.7Ca0.3MnO3/Y2O3-stabilized ZrO2/W via-hole structures  / Xinjun Liu, Kuyyadi P. Biju, Sangsu Park, Insung Kim, Manzar Siddik, Sharif Sadaf, Hyunsang Hwang  / Current Applied Physics  Volume 11, Issue 2, Supplement 1,  Pages e58-e61(2011.03)
19.
Bipolar resistance switching in the Pt/WOx/W nonvolatile memory devices  / Kuyyadi P. Biju, Xinjun Liu, Seonghyun Kim, Manzar Siddik, Jungho Shin, Joonmyoung Lee and Hyunsang Hwang, / Current Applied Physics  Volume 11, Issue 2, Supplement 1, March 2011, Pages e62-e65 (2011.03)
20.
Forming-free CuC-Buffer Oxide Resistive Switching Behavior with Improved Resistance Ratio / Seonghyun Kim, Minseok Jo, Jubong Park, Joonmyoung Lee, Wootae Lee, Hyunsang Hwang / Electrochemical and Solid-State Letters  14 (8), pp. H322-H325 (2011.08)
21.
Effect  of program/erase speed on switching uniformity in filament-engine RRAM / Jungho Shin, Jubong Park, Joonmyoung Lee, Sangsu Park, Seonghyun Kim, Wootae Lee, Insung Kim, Daeseok Lee, and Hyunsang Hwang / IEEE Electron Device Letters  32(7), pp. 958 - 960 (2011.07)
22.
Noise analysis based model of filamentary switching ReRAM with ZrO<sub>x</sub>/HfO<sub>x</sub> stacks / Daeseok Lee, Joonmyoung Lee, Minseok Jo, Jubong Park, Manzar Siddik, and Hyunsang Hwang / IEEE Electron Device Letters  32(7), pp. 964 - 966 (2011.07)
23.
Resistive switching characteristics of solution-processed TiO x for next-generation non-volatile memory application; transparency, flexibility, and nano-scale memory feasibility  / Seungjae Jung, Jaemin Kong, Sunghoon Song, Kwanghee Lee, b, c, Takhee Lee, Hyunsang Hwang, Sanghun Jeon / Microelectronic Engineering 88 (7), pp. 1143-1147 (2011.07)
24.
Resistive Switching Characteristics of Ultra-thin TiOx / Jubong Park, Seungjae Jung, Joonmyoung Lee, Wootae Lee, Seonghyun Kim, Jungho Shin, Hyunsang Hwang / Microelectronic Engineering 88 (7), pp. 1136-1139 (2011.07)
25.
Materials and Process Aspect of Cross-point RRAM / Joonmyoung Lee, Minseok Jo, Dong-jun Seong, Jungho Shin, Hyunsang Hwang / Microelectronic Engineering 88 (7), pp. 1113-1118 (2011.07)
26.
Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device / Kyungah Seo, Insung Kim, Seungjae Jung, Minseok Jo, Sangsu Park, Jubong Park, Jungho Shin, Kuyyadi P Biju, Jaemin Kong, Kwanghee Lee, Byounghun Lee, Hyunsang Hwang / Nanotechnology 22 (25), art. no. 254023  (2011.06.24)
27.
Improved switching uniformity of a Carbon-based conductive-bridge engine ReRAM by controlling the size of conducting filament / Jubong Park, Minseok Jo, Joonmyoung Lee, Seungjae Jung, Wootae Lee, Seonghyun Kim, Sangsu Park, Jungho Shin, Hyunsang Hwang / Microelectronic Engineering 88 (6), pp. 935-938  (2011.06)
28.
Excellent State Stability of Cu/SiC/Pt Programmable Metallization Cells for Nonvolatile Memory Applications / Wootae Lee, Jubong Park, Myungwoo Son, Joonmyoung Lee, Seungjae Jung, Seonghyun Kim, Sangsu Park, Jungho Shin, Hyunsang Hwang / IEEE Electron Device Letters 32(5), pp. 680-682 (2011.05)
29.
Effect of Scaling WOx-based RRAMs on their Resistive Switching Characteristics / Seonghyun Kim, Kuyyadi P. Biju, Minseok Jo, Seungjae Jung, Jubong Park, Joonmyoung Lee, Wootae Lee, Jungho Shin, Sangsu Park, Hyunsang Hwang / IEEE Electron Device 32(5), pp. 671-673 (2011.05)
30.
Ferroelectric Polarization Effect on Al-Nb Codoped Pb(Zr0.52Ti0.48)O3/Pr0.7Ca0.3MnO3 Heterostructure Resistive Memory / El Mostafa Bourim, Sangsoo Park, Xinjun Liu, Kuyyadi P. Biju, Hyunsang Hwang, Alex Ignatiev / Electrochemical and Solid-State Letters 14 (5), pp. H225-H228  (2011.05)
31.
Multi-Bit Operation of TiOx-based ReRAM by Schottky Barrier Height Engineering / Jubong Park;   Biju, K.P.;   Seungjae Jung;   Wootae Lee;   Joonmyoung Lee;   Seonghyun Kim;   Sangsu Park;   Jungho Shin;   Hyunsang Hwang   / IEEE Electron Device Letters 32 (4), art. no. 5723688, pp. 476-478  (2011.04)
32.
Improved Resistive Switching Properties of Solution-Processed TiOx Film by Incorporating Atomic Layer Deposited TiO2 layer / Insung Kim, Seungjae Jung, Jungho Shin, Kuyyadi P. Biju, Kyungah Seo, Manzar Siddik, Xinjun Liu, Jaemin Kong, Kwanghee Lee,  Hyunsang Hwang / Japanese Journal of Applied Physics 50 (2011),  046504 (2011.04)
33.
Nonlinear current-voltage behavior of the isolated resistive switching filamentary channels in CuC nanolayer  / Doo-In Kim, Jaesik Yoon, Ju-Bong Park, Hyunsang Hwang, Young Moon Kim, Se Hun Kwon, Kwang Ho Kim  / Applied Physics Letters 98 (15), art. no. 152107 (2011.04.11)
34.
Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors / Kwang Hwan Ji, Ji-In Kim, Hong Yoon Jung, Se Yeob Park, Rino Choi, Un Ki Kim, Cheol Seong Hwang, Daeseok Lee, Hyungsang Hwang,Jae Kyeong Jeong  / Applied Physics Letters 98 (10), art. no. 103509 (2011.03.07)
35.
Coexistence of filamentary and homogeneous resistive switching in graded WOx thin films / Kuyyadi P. Biju, Xinjun Liu, Seonghyun Kim, Seungjae Jung, Jubong Park, Hyunsang Hwang / Physica Status Solidi - Rapid Research Letters 5 (3), pp. 89-91 (2011.03)
36.
New set/reset scheme for excellent uniformity in bipolar resistive memory  / Jubong Park, Minseok Jo, Seungjae Jung, Joonmyoung Lee, Wootae Lee, Seonghyun Kim, Sangsu Park, Jungho Shin, Hyunsang Hwang / IEEE Electron Device 32 (3), art. no. 5680582, pp. 228-230  ( 201103)
37.
Improvement of interface quality by post-annealing on silicon nanowire MOSFET devices with multi-wire channels  / Seonghyun Kim, Minseok Jo, Seungjae Jung, Hyejung Choi, Joonmyoung Lee, Man Chang, Chunhum Cho, Hyunsang Hwang / Microelectronic Engineering 88 (3), pp. 273-275 (2011.03)
38.
TiO2-based metal-insulator-metal selection device for bipolar resistive random access memory cross-point application  / Jungho Shin, Insung Kim, Kuyyadi P. Biju, Minseok Jo, Jubong Park, Joonmyoung Lee, Seungjae Jung, Wootae Lee, Seonghyun Kim, Sangsu Park, Hyunsang Hwang / Journal of Applied Physics 109  (3), art. no. 033712  (2011.02.01)
39.
Nonvolatile resistive switching in Pr0.7Ca0.3MnO3 devices using multilayer graphene electrodes / Wootae Lee, Gunho Jo, Sangchul Lee, Jubong Park, Minseok Jo, Joonmyoung Lee, Seungjae Jung, Seonghyun Kim, Jungho Shin, Sangsu Park, Takhee Lee, Hyunsang Hwang / Applied Physics Letters 98 (3), art. no. 032105  (2011.01.17)
40.
Nonvolatile Memory Functionality of ZnO Nanowire Transistors Controlled by Mobile Protons / Jongwon Yoon, Woong-Ki Hong, Minseok Jo, Gunho Jo, Minhyeok Choe, Woojin Park, Jung Inn Sohn, Stanko Nedic, Hyungsang Hwang, Mark E. Welland, and Takhee Lee / ACS nano 5 (1), pp. 558-564  (2011.01)
41.
Improved switching characteristics of perovskite oxide-based resistance random access memory by high-pressure oxygen annealing at low temperature / Wootae Lee, Minseok Jo, Jubong Park, Joonmyoung Lee, Sangsu Park, Seonghyun Kim, Seungjae Jung, Jungho Shin, Daeseok Lee, Manzar Siddik, Hyunsang Hwang / Physica Status Solidi (A) Applications and Materials 208 (1), pp. 202-205 (2011.01)
42.
Nano-Electromechanical Switch-CMOS Hybrid Technology and Its Applications / Lee, B.H.; Hwang, H.J.; Cho, C.H.; Lim, S.K.; Lee, S.Y.; Hwang, H. / Journal of Nanoscience and Nanotechnology 11(1), pp. 256-261 (2011.01)
43.
Improved Switching Uniformity and Speed in Filament-engine RRAM Using Lightning Rod Effect  / Jubong Park, Minseok Jo, Joonmyoung Lee, Seungjae Jung, Seonghyun Kim, Wootae Lee, Jungho Shin, Hyunsang Hwang / IEEE Electron Device Letters 32 (1), pp. 63-65 (2011.01)
44.
Filament-engine Resistive Switching in Homogeneous Bi-Layer Pr0.7Ca0.3MnO3 Thin Film Memory Devices  / Xinjun Liu, Kuyyadi P. Biju, El Mostafa Bourim, Sangsu Park, Wootae Lee, Daeseok Lee, Kyungah Seo, Hyunsang Hwang / Electrochemical and Solid-State Letters 14 (1), pp. H9-H12 (2011.01)