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Low programming voltage resistive switching in reactive metal/polycrystalline Pr0.7Ca0.3MnO3 devices  / Xinjun Liu, Kuyyadi P. Biju, El Mostafa Bourim, Sangsu Park, Wootae Lee, Jungho Shin, Hyunsang Hwang / Solid State Communications 150 (45-46), pp. 2231-2235
Resistive switching characteristics of solution-processed transparent TiOx for nonvolatile memory application  / Seungjae Jung, Jaemin Kong, Sunghoon Song, Kwanghee Lee, Takhee Lee, Hyunsang Hwang, Sanghun Jeon / Journal of the Electrochemical Society 157 (11), pp. H1042-H1045
Effect of ZrOx/HfOx bilayer structure on switching uniformity and reliability in nonvolatile memory applications  / Joonmyoung Lee, El Mostafa Bourim, Wootae Lee, Jubong Park, Minseok Jo, Seungjae Jung, Jungho Shin, Hyunsang Hwang / Applied Physics Letters 97 (17), art. no. 172105
Improved resistive switching properties of solution processed ti O 2 thin films  / Kuyyadi P. Biju, Xinjun Liu, El Mostafa Bourim, Insung Kim, Seungjae Jung, Jubong Park,  Hyunsang Hwang / Electrochemical and Solid-State Letters 13 (12), pp. H443-H446 (2010.12)
Three-Dimensional Integration of Organic Resistive Memory Devices / Sunghoon Song , Byungjin Cho , Tae-Wook Kim , Yongsung Ji , Minseok Jo ,Gunuk Wang , Minhyeok Choe , Yung Ho Kahng , Hyunsang Hwang , Takhee Lee / Advanced Materials 22 (44), pp. 5048-5052 (2010.11.24)
Asymmetric bipolar resistive switching in solution-processed Pt/TiO 2/W devices / Kuyyadi P Biju, XinJun Liu, El Mostafa Bourim, Insung Kim, Seungjae Jung, Manzar Siddik, Joonmyoung Lee, Hyunsang Hwang / Journal of Physics D: Applied Physics 43 (49), art. no. 495104 (2010.12.15)
Effect of metal ions on the switching performance of polyfluorene-based organic non-volatile memory devices / Tae-Wook Kim, Seung-Hwan Oh, Joonmyoung Lee, Hyejung Choi, Gunuk Wang, Jubong Park, Dong-Yu Kim, Hyunsang Hwang, Takhee Lee / Organic Electronics: physics, materials, applications 11 (1), pp. 109-114 (2010.01)
Reverse resistance switching in polycrystalline Nb2O5 films / Younghun Jo, Hyunjun Sim, Hyunsang Hwang, Ken Ahn, Myung-Hwa Jung / Thin Solid Films 518 (20), pp. 5676-5678 (2010.08.02)
Investigation of State Stability of Low Resistance State in Resistive Memory / Jubong Park, Minseok Jo, El Mostafa Bourim, Jaesik Yoon, Dong-Jun Seong, Joonmyoung Lee, Wootae Lee, and Hyunsang Hwang / IEEE Electron Device Letters 31(5), art. no. 5433005, pp. 485-487 (2010.05)
Characterization of fast charge trapping in bias temperature instability in metal-oxide-semiconductor field effect transistor with high dielectric constant / Minseok Jo, Seonghyun Kim, Joonmyoung Lee, Seungjae Jung, Ju-Bong Park, Hyung-Suk Jung, Rino Choi, and Hyunsang Hwang / Applied Physics Letters 96 (14), art. no. 142110 (2010.04.05)
Effect of Fast Components in Threshold Voltage Shift on Bias Temperature Instability in High-k MOSFETs / Minseok Jo, Seonghyun Kim, Seungjae Jung, Ju-Bong Park, Joonmyoung Lee, Hyung-Suk Jung, Rino Choi, and Hyunsang Hwang / IEEE Electron Device Letters 31 (4), art. no. 13, pp. 287-289 (2010.04)
Rewritable switching of one diode-one resistor nonvolatile organic memory devices / Byungjin Cho, Tae-Wook Kim, Sunghoon Song, Yongsung Ji, Minseok Jo, Hyunsang Hwang, Gun-Young Jung, Takhee Lee / Advanced Materials 22 (11), pp. 1228-1232 (2010.03.19)
Electrical properties of ZnO nanowire field effect transistors with varying high-k Al2O3 dielectric thickness / Minhyeok Choe, Gunho Jo, Jongsun Maeng, Woong-Ki Hong, Minseok Jo, Gunuk Wang, Woojin Park, Byoung Hun Lee, Hyunsang Hwang, and Takhee Lee / Journal of Applied Physics 107 (3), art. no. 034504 (2010.02.01)
Band bending effect induced by gate voltage on the charge loss behavior of charge trap flash memory devicesM. Chang, H. Hwang, and S. Jeon  / Applied Physics Letters 96 (5), art. no. 052106 (2010.02.01)
Hydrogen Defect Passivation of Silicon Transistor on Plastic for High Performance Flexible Device Application / Musarrat Hasan, Sun Jin Yun, Jae Bon Koo, Sang Hee Ko Park, Yong Hae Kim, Seung Youl Kang, Jonghyun Rho, Jee Hoon Kim, Houk Jang, Jong-Hyun Ahn, Min-Seok Jo, and Hyunsang Hwang / Electrochemical and Solid-State Letters 13 (3), pp. H80-H82 (2010.03)
Analysis of interface switching for Nb doped SrTiO3 single crystal device using complex impedance spectroscopy / Joonmyoung Lee, El Mostafa Bourima, Dongku Shin, Jong-Sook Lee, Dong-jun Seong, Jubong Park, Wootae Lee, Man Chang, Seungjae Jung, Jungho Shin and Hyunsang Hwang, / Current Applied Physics 10 (1 SUPPL. 1), pp. e68-e70 (2010.01)