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1.
Dependence of the Metal Electrode and Improved Pulse Switching Speed of La0.7Ca0.3MnO3 as a Resistance Change Memory Device / Musarrat Hasan, Rui Dong, Hyejung Choi, Jaesik Yoon, Ju-bong Park, Dong-joon Seong, Hyunsang Hwang / Journal of the Electrochemical Society 156 (4), pp. H239-H242 (2009.04)
2.
A Study of Strain Engineering using CESL Stressor on Reliability Comparing Effect of Intrinsic Mechanical Stress / Kyong Taek Lee, Chang Yong Kang, Min-Sang Park, Byoung Hun Lee, Ho Kyung Park, Hyun Sang Hwang, Hsing-Huang Tseng, Jammy, R., Yoon-Ha Jeong / IEEE Electron Device Letters 30 (7), pp. 760-762 (2009.07)
3.
Advanced impurity trap memory with atomic-scale Ti impurities on LaAlO3: Evidence for the origins of enhanced memory performance / Seungjae Jung, Hyejung Choi, Yongkyu Ju, Man Chang, Minseok Jo, Joonmyoung Lee, Jaesik Yoon, Choongman Lee, Hyunsang Hwang / Applied Physics Letters 95 (24), art. no. 242112 (2009.12.14)
4.
Characteristics of Traps Induced by Hot Holes Under Negative-Bias Temperature Stress in a pMOSFET / Minseok Jo, Man Chang, Seonghyun Kim, Seungjae Jung, Ju-Bong Park, Joonmyoung Lee, Dong-Jun Seong, Hyunsang Hwang / IEEE Electron Device Letters 30 (11), pp. 1194-1196 (2009.11)
5.
Device Performance and Reliability Characteristics of Tantalum-Silicon-Nitride Electrode/Hafnium Oxide n-engine Metal-Oxide-Semiconductor Field-Effect Transistor Depending on Electrode Composition / Hokyung Park , Man Chang, Minseok Jo, Rino Choi, Byoung Hun Lee, Hyunsang Hwang / Japanese Journal of Applied Physics 48 (11), art. no. 116506 (2009.11.20)
6.
Hybrid complementary logic circuits of one-dimensional nanomaterials with adjustment of operation voltage / Gunho Jo, Woong-Ki Hong, Jung Inn Sohn, Minseok Jo, Jiyong Shin, Mark E. Welland, Hyunsang Hwang, Kurt E. Geckeler, Takhee Lee / Advanced Materials 21 (21), pp. 2156-2160 (2009.06.05)
7.
One transistor-one resistor devices for polymer non-volatile memory applications / Tae-Wook Kim, Hyejung Choi, Seung-Hwan Oh, Gunuk Wang,Dong-Yu Kim, Hyunsang Hwang, Takhee Lee / Advanced Materials 21 (24), pp. 2497-2500 (2009.06.26)
8.
Resistive-Switching Characteristics of Al/Pr0.7Ca0.3MnO3 for Nonvolatile Memory Applications / Dong-Jun Seong, Musarrat Hassan, Hyejung Choi, Joonmyoung Lee, Jaesik Yoon, Ju-Bong Park, Wootae Lee, Min-Suk Oh,  Hyunsang Hwang / IEEE Electron Device Letters 30 (9), pp. 919-921 (2009.09)
9.
An electrically modifiable synapse array of resistive switching memory / Hyejung Choi, Heesoo Jung, Joonmyoung Lee, Jaesik Yoon, Jubong Park, Dong-jun Seong, Wootae Lee, Musarrat Hasan, Gun-Young Jung, Hyunsang Hwang / Nanotechnology 20 (34), art. no. 345201 (2009.08.26)
10.
Contribution of Interface States and Oxide Traps to the Negative Bias Temperature Instability of High-k pMOSFETs / Minseok Jo, Man Chang, Seonghyun Kim, Hyung-Suk Jung, Rino Choi,  Hyunsang Hwang  / IEEE Electron Device Letters 30 (3), pp. 291-293 (2009.03)
11.
Transient charge trapping and detrapping properties of a thick SiO2/Al2O3 stack studied by short single pulse Id-Vg / Man Chang, Minseok Jo, Seungjae Jung, Joonmyoung Lee, Sanghun Jeon,  Hyunsang Hwang / Applied Physics Letters 94 (26), art. no. 262107 (2009.06.29)
12.
Analysis of copper ion filaments and retention of dual-layered devices for resistance random access memory applications / Jaesik Yoon, Joonmyoung Lee, Hyejung Choi, Ju-Bong Park, Dong-jun Seong, Wootae Lee, Chunhum Cho, Seonghyun Kim, Hyunsang Hwang / Microelectronic Engineering 86 (7-9), pp. 1929-1932 (2009.07)
13.
Reliable impurity trap memory with high charge trap efficiency using ultrathin SiO2 impurity host layer for nonvolatile memory application / Seungjae Jung, Man Chang , Seonghyun Kim, Joonmyung Lee, Chunhum Cho, Choongman Lee, Hyunsang Hwang / Microelectronic Engineering 86 (7-9), pp. 1812-1814 (2009.07)
14.
The impact of Al interfacial layer on resistive switching of La0.7Sr0.3MnO3 for reliable ReRAM applications / Joonmyoung Lee, Hyejung Choi, Dong-jun Seong, Jaesik Yoon, Jubong Park, Seungjae Jung, Wootae Lee, Man Chang, Chunhum Cho, Hyunsang Hwang / Microelectronic Engineering 86 (7-9), pp. 1933-1935 (2009.07)
15.
Data retention characteristics of MANOS-engine flash memory device with different metal gates at various levels of charge injection / Man Chang, Tae-Wook Kim, Joonmyoung Lee, Minseok Jo, Seonghyun Kim, Seungjae Jung, Hyejung Choi, Takhee Lee, Hyunsang Hwang / Microelectronic Engineering 86 (7-9), pp. 1804-1806 (2009.07)
16.
Resistive switching characteristics of polymer non-volatile memory devices in a scalable via-hole structure / Tae-Wook Kim, Hyejung Choi, Seung-Hwan Oh, Minseok Jo, Gunuk Wang, Byungjin Cho, Dong-Yu Kim, Hyunsang Hwang, Takhee Lee / Nanotechnology 20 (2), art. no. 025201 (2009.01.14)
17.
Effect of High-Pressure Oxygen Annealing on Electrical Characteristics of Metal-Alumina-Nitride-Oxide-Silicon-engine Flash Memory Devices / Yongkyu Ju, Man Chang, Seungjae Jung, Minseok Jo, JoonMyoung Lee, Jaesik Yoon, Hyunsang Hwang / Japanese Journal of Applied Physics 48 (4 PART 2), art. no. 04C065 (2009.04)
18.
Excellent Switching Uniformity of Cu-Doped MoOx/GdOx Bilayer for Nonvolatile Memory Applications / Jaesik Yoon, Hyejung Choi, Dongsoo Lee, Ju-Bong Park, Joonmyoung Lee, Dong-Jun Seong, Yongkyu Ju, Man Chang, Seungjae Jung,  Hyunsang Hwang / IEEE Electron Device Letters 30 (5), pp. 457-459 (2009.05)
19.
Nanoscale Resistive Switching of a Copper–Carbon-Mixed Layer for Nonvolatile Memory Applications / Hyejung Choi, Myeongbum Pyun, Tae-Wook Kim, Musarrat Hasan, Rui Dong, Joonmyoung Lee, Ju-Bong Park, Jaesik Yoon, Dong-jun Seong, Takhee Lee,  Hyunsang Hwang / IEEE Electron Device Letters 30 (3), pp. 302-304  (2009.03)
20.
The effect of excimer laser annealing on ZnO nanowires and their field effect transistors / Jongsun Maeng, Sungho Heo, Gunho Jo, Minhyeok Choe, Seonghyun Kim, Hyunsang Hwang, Takhee Lee / Nanotechnology 20 (9), art. no. 095203 (2009.03.04)
21.
Gate voltage dependence on hot carrier degradation at an elevated temperature in a device with ultrathin silicon oxynitride / Minseok Jo, Seonghyun Kim, Chunhum Cho, Man Chang, Hyunsang Hwang / Applied Physics Letters 94 (5), art. no. 053505 (2009.02.02)