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1.
Enhancement of Data Retention Time for 512-Mb DRAMs Using High-Pressure Deuterium Annealing / Hyo Sik Chang, Hyunsang Hwang / IEEE Transactions on Electron Devices 55 (12), pp. 3599-3601 (2008.12)
2.
Characteristics of Al2O3 gate dielectrics partially fluorinated by a low energy fluorine beam / Sung Woo Kim, Byoung Jae Park, Se Koo Kang, Bo Hyun Kong, Hyung Koun Cho, Geun Young Yeom, Sungho Heo, Hyunsang Hwang / Applied Physics Letters 93 (19), art. no. 191506 (2008.11.10)
3.
Charge loss behavior of a metal-alumina-nitride-oxide-silicon-engine flash memory cell with different levels of charge injection / Man Chang, Minseok Jo, Seonghyun Kim, Yongkyu Ju, Seungjae Jung, Joonmyoung Lee, Jaesik Yoon, Hyunsang Hwang, Choongman Lee / Applied Physics Letters 93 (23), art. no. 232105 (2008.12.08)
4.
The effect of KrF laser annealing within an ultrashort time on metal-alumina-nitride-oxide-silicon-engine flash memory devices / Sungho Heo, Man Chang, Yongkyu Ju, Seungjae Jung, Hyunsang Hwang  / Applied Physics Letters 93 (17), art. no. 172115 (2008.10.27)
5.
Transient reverse current phenomenon in a p-n heterojunction comprised of poly(3,4-ethylene-dioxythiophene):poly(styrene-sulfonate) and ZnO nanowall / Jongsun Maeng, Minseok Jo, Seok-Ju Kang, Min-Ki Kwon, Gunho Jo, Tae-Wook Kim, Jaeduck Seo, Hyunsang Hwang, Dong-Yu Kim, Seong-Ju Park, Takhee Lee / Applied Physics Letters 93 (12), art. no. 123109 (2008.09.22)
6.
Understanding of the Switching Mechanism of a Pt/Ni-Doped SrTiO3 Junction via Current–Voltage and Capacitance–Voltage Measurements / Dong-jun Seong, Dongsoo Lee, Myungbum Pyun, Jaesik Yoon, Hyunsang Hwang / Japanese Journal of Applied Physics 47 (12), pp. 8749-8751 (2008.12.19)
7.
Electrical and reliability characteristics of copper-doped carbon (CuC) based resistive switching devices for nonvolatile memory applications / Myeongbum Pyun, Hyejung Choi, Ju-Bong Park, Dongsoo Lee, Musarrat Hasan, Rui Dong, Seung-Jae Jung, Joonmyoung Lee, Dong-jun Seong, Jaesik Yoon, Hyunsang Hwang / Applied Physics Letters 93 (21), art. no. 212907 (2008.11.24)
8.
Effect of ruthenium oxide electrode on the resistive switching of Nb-doped strontium titanate / Musarrat Hasan, Rui Dong, H. J. Choi, D. S. Lee, D.-J. Seong, M. B. Pyun, Hyunsang Hwang / Applied Physics Letters 93 (5), art. no. 052908 (2008.08.04)
9.
Study of Fluorine Incorporation in the Blocking Oxide of MANOS-engine Flash Memory Devices / Man Chang, Joonmyoung Lee, Yongkyu Ju, Seungjae Jung, Hyejung Choi, Minseok Jo, Hyunsang Hwang / Electrochemical and Solid-State Letters 11 (12), pp. H320-H322 (2008.12)
10.
Laser Annealing on Ti Electrode: Impact on Ti/HfO2/SiO2 n-engine MOSFET / Sungho Heo, R. Dong, Musarrat Hasan, Hyunsang Hwang, S. D. Park, G. Y. Yeom / Electrochemical and Solid-State Letters 11 (10), pp. H276-H279 (2008.10)
11.
Impact of oxygen incorporation at the Si3N4/Al2O3 interface on retention characteristics for nonvolatile memory applications / Man Chang, Yongkyu Ju, Joonmyoung Lee, Seungjae Jung, Hyejung Choi, Minseok Jo, Sanghun Jeon, Hyunsang Hwang / Applied Physics Letters 93 (2), art. no. 022101 (2008.07.14)
12.
Mechanism of current hysteresis in reduced rutile TiO2 crystals for resistive memory / R. Dong D.S. Lee M.B. Pyun M. Hasan H.J. Choi M.S. Jo D.J. Seong M. Chang S.H. Heo J.M. Lee H.K. Park Hyunsang Hwang / Applied Physics A: Materials Science and Processing 93 (2), pp. 409-414 (2008.11)
13.
Modulation of TiSiN effective work function using high-pressure postmetallization annealing in dilute oxygen ambient / Joonmyoung Lee, Hokyung Park, Hyejung Choi, Musarrat Hasan, Minseok Jo, Man Chang, Byoung Hun Lee, Chang Seo Park, Chang Yong Kang, Hyunsang Hwang / Applied Physics Letters 92 (26), art. no. 263505 (2008.06.30)
14.
Reversible switching characteristics of polyfluorene-derivative single layer film for nonvolatile memory devices / Tae-Wook Kim, Seung-Hwan Oh, Hyejung Choi, Gunuk Wang, Hyunsang Hwang, Dong-Yu Kim, Takhee Lee / Applied Physics Letters 92 (25), art. no. 253308 (2008.06.23)
15.
Reliable Organic Nonvolatile Memory Device Using a Polyfluorene-Derivative Single-Layer Film / Tae-Wook Kim, Seung-Hwan Oh, Hyejung Choi, Gunuk Wang, Hyunsang Hwang, Dong-Yu Kim, Takhee Lee / IEEE Electron Device Letters 29 (8), pp. 852-855 (2008.08)
16.
Memory characteristics of a self-assembled monolayer of Pt nanoparticles as a charge trapping layer / Hyejung Choi, Byung-Sang Choi, Tae-Wook Kim, Seung-Jae Jung, Man Chang, Takhee Lee, Hyunsang Hwang / Nanotechnology 19 (30), art. no. 305704 (2008.07.30)
17.
Uniform resistive switching with a thin reactive metal interface layer in metal-La0.7Ca0.3MnO3-metal heterostructures / Musarrat Hasan, Rui Dong, H. J. Choi, D. S. Lee, D.-J. Seong, M. B. Pyun, Hyunsang Hwang / Applied Physics Letters 92 (20), art. no. 202102 (2008.05.19)
18.
Improved Memory Characteristics of Ge Nanocrystals Using a LaAlO3 Buffer Layer / Hyejung Choi, Man Chang, Minseok Jo, Seung-Jae Jung, Hyunsang Hwang / Electrochemical and Solid-State Letters 11 (6), pp. H154-H156 (2008.06)
19.
High-Pressure Deuterium Annealing Effect on Nanoscale Strained CMOS Devices / Sung-Man Cho, Jeong-Hyun Lee, Man Chang, Min-Seok Jo, Hyun-Sang Hwang, Jong-kon Lee, Sung-Bo Hwang, Jong-Ho Lee/ IEEE Transactions on Device and Materials Reliability 8 (1), art. no. 4399958, pp. 153-158 (2008.03)
20.
Effect of Oxygen Postdeposition Annealing on Bias Temperature Instability of Hafnium Silicate MOSFET / Minseok Jo, Hokyung Park, Joon-myoung Lee, Man Chang, Hyung-Suk Jung, Jong-Ho Lee, Hyunsang Hwang / IEEE Electron Device Letters 29 (4), pp. 399-401 (2008.04)
21.
A Materials Approach to Resistive Switching Memory Oxides / M. Hasan, R. Dong, D. S. Lee, D. J. Seong, H. J. Choi, M.B. Pyun, H. Hwang / Journal of Semiconductor Technology and Science 8 (1) pp. 66-79 (2008.03)
22.
Dual-Metal-Gate Work Function by Controlling Metal Gate Thickness and Composition / Musarrat Hasan, Hokyong Park, Joon-Myoung Lee, Hyunsang Hwang / Electrochemical and Solid-State Letters 11 (5), pp. H124-H126 (2008.05)
23.
Stress-Polarity-Independent Negative Threshold Voltage Shift in HfO2/TiN P-Channel Metal Oxide Semiconductor Field-Effect Transistor / Hokyung Park, Rino Choi, Byoung Hun Lee, Gennadi Bersuker, Hyunsang Hwang / Japanese Journal of Applied Physics 47 (1), pp. 136-138  (2008.01.25)
24.
The Effect of Nanoscale Nonuniformity of Oxygen Vacancy on Electrical and Reliability Characteristics of HfO2 MOSFET Devices / Hokyung Park, Minseok Jo, Hyejung Choi, Musarrat Hasan, Rino Choi, Paul D. Kirsch, Chang Young Kang, Byoung Hun Lee, Tae-Wook Kim, Takhee Lee, Hyunsang Hwang / IEEE Electron Device Letters 29 (1), pp. 54-56 (2008.01)