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1.
Ultrashallow (<10 nm)p+/n junction formed by B 18H22 cluster ion implantation and excimer laser annealing / Sungho Heo, Hyunsang Hwang, H. T. Cho, and W. A. Krull / Applied Physics Letters 89 (24), art. no. 243516 (2006.12.11)
2.
Electrical characteristics of LaAlO3 gate dielectrics prepared by high-pressure hydrogen post-deposition annealing / Musarrat Hasan, Min Seok Jo, Md. Shahriar Rahman, Hyejong Choi, Sungho Heo, Hyunsang Hwang / Electrochemical and Solid-State Letters 9 (11), pp. F77-F79 (2006.11)
3.
Electrical properties of atomic layer deposited HfO2 gate dielectric film using D2O as oxidant for improved reliability / Taeho Lee, Han-Kyoung Ko, Jinho Ahn, In-Sung Park, Hyunjun Sim, Hokyung Park, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 45 (9 A), pp. 6993-6995 (2006.09.07)
4.
Decoupling of cold-carrier effects in hot-carrier reliability assessment of HfO2 gated nMOSFETs / Hokyung Park, Rino Choi, Byoung Hun Lee, Seung-Chul Song, Man Chang, Chadwin D. Young, Gennadi Bersuker, Jack C. Lee, Hyunsang Hwang / IEEE Electron Device Letters 27 (8), pp. 662-664 (2006.08)
5.
Nano-scale memory characteristics of silicon nitride charge trapping layer with silicon nanocrystals / Hyejung Choi, Sangmoo Choi1, Tae-Wook Kim, Takhee Lee, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 2: Letters 45 (29-32), pp. L807-L809 (2006.08.11)
6.
Impact of metal work function on memory properties of charge-trap Flash memory devices using Fowler-Nordheim P/E mode / Sanghun Jeon, Jeong Hee Han, Junghoon Lee, Sangmoo Choi, Hyunsang Hwang, Chungwoo Kim / IEEE Electron Device Letters 27 (6), pp. 486-488 (2006.06)
7.
ScNx gate on atomic layer deposited HfO2 and effect of high-pressure wet post deposition annealing / Hyundoek Yang, Dongsoo Lee, M. S. Rahman, M. Hasan, Hyung-Seok Jung, Hyunsang Hwang / IEEE Electron Device Letters 27 (6), pp. 435-438 (2006.06)
8.
Effects of high-pressure hydrogen postannealing on the electrical and structural properties of the Pt-Er alloy metal gate on HfO2 film / Chel-Jong Choi, Moon-Gyu Jang, Yark-Yeon Kim, Myung-Sim Jeon, Byoung-Chul Park, Seong-Jae Lee, Ran-Ju Jung, Hyun-doek Yang, Man Chang, Hyun-sang Hwang / Electrochemical and Solid-State Letters 9 (7), pp. G228-G230 (2006.07)
9.
Formation of a self-aligned hard mask using hydrogen silsesquioxane / Kiju Im, Chang-Geun Ahn, Jong-Heon Yang, In-Bok Baek, Seongjae Lee, Hyunsang Hwang, Won-ju Cho / Applied Physics Letters 88 (15), art. no. 153502 (2006.04.10)
10.
Reversible resistive switching of SrTi Ox thin films for nonvolatile memory applications / Dooho Choi, Dongsoo Lee, Hyunjun Sim, Man Chang, Hyunsang Hwang / Applied Physics Letters 88 (8) art. no. 082904 (2006.02.20)
11.
Sub-15 nm n+/p -Germanium shallow junction formed by PH 3 plasma doping and excimer laser annealing / Sungho Heo, Sungkweon Baek, Dongkyu Lee, Musarrat Hasan, Hyungsuk Jung, Jongho Lee, Hyunsang Hwang / Electrochemical and Solid-State Letters 9 (4), pp. 136-137 (2006.04)
12.
Enhanced reliability and performance of high-k MOSFET by two-step annealing / M. Shahriar Rahman, Hokyung Park, Man Chang, Dongsoo Lee, Byoung Hun Lee, Hyunsang Hwang / Electrochemical and Solid-State Letters 9 (4), pp. G127-G129 (2006.04)
13.
Electrical characteristics of ultrashallow p+/n junction formed by BF 3 plasma doping and two-step annealing process / Dongkyu Lee, Sungho Heo, Changhee Cho, G. H. Buh, Tai-su Park, Jongryeol Yoo, Yugyun Shin, and Hyunsang Hwang / Electrochemical and Solid-State Letters 9 (4), pp. G121-G123 (2006.04)
14.
Effective work function of scandium nitride gate electrodes on SiO 2 and HfO2 / Hyundoek Yang, Sungho Heo, Dongkyu Lee, Sangmoo Choi, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 2: Letters 45 (1-3), pp. L83-L85 (2006.01.31)
15.
Ultrashallow p+/n junction prepared by low energy BF3 plasma doping and KrF excimer laser annealing / Dongkyu Lee, Sungkweon Baek, Sungho Heo, Changhee Cho, Gyoungho Buh, Taisu Park, Yugyun Shin, Hyunsang Hwang / Electrochemical and Solid-State Letters 9 (1), pp. G19-G21 (2006.01)