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1.
Improved Charge-Trapping Nonvolatile Memory with Dy-doped HfO2 as Charge-Trapping Layer and Al2O3 as Blocking Layer / Sangmoo Choi, Myungjun Cho, Chandan B. Samantaray, Sanghun Jeon, Chungwoo Kim, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 2: Letters 43 (7 A), pp. L882-L884 (2004.07.01)
2.
Antimony as a Proper Candidate for Low-Temperature Solid Phase Epitaxially Activated n+/p Junctions / Shahram Ghanad Tavakoli, Sungkweon Baek, Hyo Sik Chang, Dae Won Moon, Hyunsang Hwang / Electrochemical and Solid-State Letters 7 (10), pp. G216-G218 (2004.10)
3.
Electrical and Structural Characteristics of High-k Gate Dielectrics with Epitaxial Si3N4 Interfacial Layer on Si(111) / Hyunjun Sim, Chandan B. Samantaray, Taeho Lee, Hanwoong Yeom, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 43 (12), pp. 7926-7928 (2004.12.15)
4.
Atomic transport and stability during annealing of HfO2 and HfAlO with an ultrathin layer of SiO2 on Si(001) / Hyo Sik Chang, Hyunsang Hwang, Mann-ho Cho, Hyun Kyung Kim, Dae Won Moon / Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 22 (1), pp. 165-169 (2004.01)
5.
Thermal stability and decomposition of the HfO2–Al2O3 laminate system / Hyo Sik Chang, Hyunsang Hwang, Mann-Ho Cho, Dae Won Moon, Seok Joo Doh, Jong Ho Lee, Nae-In Lee / Applied Physics Letters 84 (1), pp. 28-30 (2004.01.05)
6.
Fabrication of 50 nm Trigate Silicon On Insulator Metal–Oxide–Silicon Field-Effect Transistor without Source/Drain Activation Annealing / Kiju Im, Won-Ju Cho, Chang-Geun Ahn, Jong-Heon Yang, Jihun Oh, Seongjae Lee, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 43 (5 A), pp. 2438-2441 (2004.05.15)
7.
Electrical and Physical Properties of HfO2 Deposited via ALD Using Hf(OtBu)4 and Ozone atop Al2O3 / H. S. Chang, S.-K. Baek, H. Park, H. Hwang, J. H. Oh, W. S. Shin, J. H. Yeo, K. H. Hwang, S. W. Nam, H. D. Lee, C. L. Song, D. W. Moon, M.-H. Cho / Electrochemical and Solid-State Letters 7 (6), pp. F42-F44 (2004.06)
8.
Electronic structures of high-k transition metal silicates: first-principles calculations / C. B. Samantaray, Hyunjun Sim, Hyunsang Hwang / Microelectronics Journal 35 (8), pp. 655-658 (2004.08)
9.
Electronic structure and optical properties of barium strontium titanate (BaxSr1−xTiO3) using first-principles method / C.B. Samantaray, H. Sim, H. Hwang / Physica B: Condensed Matter 351 (1-2), pp. 158-162 (2004.08.15)
10.
Electronic structures of transitional metal aluminates as high-k gate dielectrics: first principles study / C. B. Samantaray, Hyunjun Sim, Hyunsang Hwang / Applied Surface Science 239 (1), pp. 101-108 (2004.12.15)
11.
High-pressure deuterium annealing for improving the reliability characteristics of silicon–oxide–nitride–oxide–silicon nonvolatile memory devices / Sangmoo Choi, Man Jang, Hokyung Park, Hyunsang Hwang, Sanghun Jeon, Juhyung Kim, Chungwoo Kim / Applied Physics Letters 85 (26), pp. 6415-6417 (2004.12.27)
12.
Effect of germanium pre-amorphization on solid-phase epitaxial regrowth of antimony and arsenic ion-implanted silicon / Shahram Ghanad Tavakoli, Sungkweon Baek, Hyunsang Hwang / Materials Science and Engineering B: Solid-State Materials for Advanced Technology 114-115 (SPEC. ISS.), pp. 376-380 (2004.12)