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1.
High-k Gate Dielectric Prepared by Low-Temperature Wet Oxidation of Ultrathin Metal Nitride Directly Deposited on Silicon / Sangmoo Choi, Sanghun Jeon, Myungjun Cho, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 2: Letters 42 (2 A), pp. L102-L104 (2003.02.01)
2.
Electrical characteristics of epitaxially grown SrTiO3 on silicon for metal-insulator-semiconductor gate dielectric applications / Sanghun Jeon, Frederick J. Walker, Curtis A. Billman, Rodney A. McKee, Hyunsang Hwang / IEEE Electron Device Letters 24 (4), pp. 218-220 (2003.04)
3.
Effect of hygroscopic nature on the electrical characteristics of lanthanide oxides (Pr2O3, Sm2O3, Gd2O3, and Dy2O3) / Sanghun Jeon, Hyunsang Hwang / Journal of Applied Physics 93 (10 1), pp. 6393-6395 (2003.05.15)
4.
Electrical Characteristics of Ozone-Oxidized HfO2 Gate Dielectrics / Hyunjun Sim, Hyosik Chang, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 42 (4 A), pp. 1596-1597 (2003.04.15)
5.
Size-dependent charge storage in amorphous silicon quantum dots embedded in silicon nitride / Nae-Man Park, Sang-Hun Jeon, Hyun-Deok Yang, Hyunsang Hwang, Seong-Ju Park, Suk-Ho Choi / Applied Physics Letters 83 (5), pp. 1014-1016 (2003.08.04)
6.
Electrical characteristics of ZrO2 prepared by electrochemical anodization of Zr in an ammonium tartrate electrolyte / Sanghun Jeon, Hyunsang Hwang / Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 21 (5), pp. L5-L9 (2003.09)
7.
Improved metal–oxide–nitride–oxide–silicon-engine flash device with high-k dielectrics for blocking layer / Sangmoo Choi, Myungjun Cho, Hyunsang Hwang, Jung Woo Kim / Journal of Applied Physics 94 (8), pp. 5408-5410 (2003.10.15)