ABMI
  • SIDP : Semiconductor intergrated device & process
  • Home > Publication > Papers > Journals
Publication
        - Invited talk
        - Journals
        - Conferences
        - Books or Magazines
Papers
2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 2008 2007 2006 2005 2004 2003 2002 2001 2000


1.
Electrical characteristics of ultrathin ZrO2 prepared by wet oxidation of an ultrathin Zr-metal layer / Sanghun Jeon, Hyunsang Hwang / Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 20 (1), pp. 400-405 (2002.01)
2.
Electrical Characteristics of High-k Metal Oxide/SiO2 Stack Gate Dielectric Prepared by Reaction of Metal with SiO2 / Jeshik Shin, Sanghun Jeon, Hyunsang Hwang / Journal of the Electrochemical Society 149 (1), pp. F1-F3 (2002.01)
3.
Effect of Si lattice strain on the reliability characteristics of ultrathin SiO2 on a 4 tilted wafer / Hyo Sik Chang, Sangmu Choi, Hyundoek Yang, Kyung-youl Min, Dae Won Moon, Hyung-Ik Lee, Hyunsang Hwang / Applied Physics Letters 80 (3), pp. 386 (2002.01.21)
4.
Interfacial properties of a hetero-structure YSZ/p-(1 0 0)Si prepared by magnetron sputtering / Sanghun Jeon, Matsuda Takanori, Akira Unno, Kiyotaka Wasa, Yoko Ichikawa, Hyunsang Hwang / Vacuum 65 (1), pp. 19-25 (2002.02.26)
5.
Effect of low-temperature preannealing on laser-annealed p+/n ultrashallow junctions / Sungkweon Baek, Taesung Jang, Hyunsang Hwang / Applied Physics Letters 80 (13), pp. 2272 (2002.04.01)
6.
Ultrathin nitrided-nanolaminate (Al2O3/ZrO2/Al2O3) for metal–oxide–semiconductor gate dielectric applications / Sanghun Jeon, Hyundoek Yang, Hyo Sik Chang, Dae-Gyu Park, Hyunsang Hwang / Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 20 (3), pp. 1143-1145 (2002.05)
7.
Excellent thermal stability of Al2O3/ZrO2/Al2O3 stack structure for metal–oxide–semiconductor gate dielectrics application / Hyo Sik Chang, Sanghun Jeon, Hyunsang Hwang, Dae Won Moon / Applied Physics Letters 80 (18), pp. 3385-3387 (2002.05.06)
8.
Improved Extrapolation Method of Ultrathin Oxide Thickness Using C–V Characteristics of Metal-Oxide-Semiconductor Device / Hyundoek Yang, Hyo Sik Chang, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 2: Letters 41 (5 B), pp. L549-L551 (2002.05.15)
9.
Electrical Characteristics of ZrO2 Gate Dielectric Deposited on Ultrathin Silicon Capping Layer for SiGe Metal-Oxide-Semiconductor Device Applications / Sangmoo Choi, Sanghun Jeon, Hyunsang Hwang, Young J. Song, Jung-Wook Lim, Kyu-Hwan Shim, Kyung Wan Park / Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 41 (8), pp. 5129-5130 (2002.08)
10.
Lateral current transport path, a model for GaN-based light-emitting diodes: Applications to practical device designs / Hyunsoo Kim, Seong-Ju Park, Hyunsang Hwang, Nae-Man Park / Applied Physics Letters 81 (7), pp. 1326 (2002.08.12)
11.
Measurement of the physical and electrical thickness of ultrathin gate oxides / H. S. Chang, H. D. Yang, H. Hwang, H. M. Cho, H. J. Lee, D. W. Moon / Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 20 (5), pp. 1836-1842 (2002.09)
12.
Experimental Determination of Ultrathin Oxide Thickness Using Conventional Capacitance–Voltage Analysis / Hyundoek Yang, Hyo Sik Chang, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 41 (10), pp. 5974-5975 (2002.10.15)
13.
Effect of Low Temperature Annealing Prior to Laser Annealing of an Ultrashallow n+/p Junction / Taesung Jang, Sungkweon Baek, Hyunsang Hwang / Journal of the Electrochemical Society 149 (12), pp. G661-G663 (2002.12)
14.
Electrical and Structural Properties of Nanolaminate (Al2O3/ZrO2/Al2O3) for Metal Oxide Semiconductor Gate Dielectric Applications / Sanghun Jeon, Hyundoek Yang, Dae-Gyu Park, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 41 (4 B), pp. 2390-2393 (2002.04)
15.
Improved Reliability Characteristics of Ultrathin SiO2 Grown by Low Temperature Ozone Oxidation / Hyo Sik Chang, Sangmoo Choi, Dae Won Moon, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 41 (10), pp. 5971-5973  (2002.10.15)
16.
Design and fabrication of highly efficient GaN-based light-emitting diodes / Hyunsoo Kim, Seong-Ju Park, Hyunsang Hwang / IEEE Transactions on Electron Devices 49 (10), pp. 1715-1722 (2002.10)
17.
Effect of deuterium postmetal annealing on the reliability characteristics of an atomic-layer-deposited HfO2/SiO2 stack gate dielectrics / Hyunjun Sim, Hyunsang Hwang / Applied Physics Letters 81 (21), pp. 4038-4039 (2002.11.18)
18.
Electrical and physical characteristics of PrTixOy for metal-oxide-semiconductor gate dielectric applications / Sanghun Jeon, Hyunsang Hwang / Applied Physics Letters 81 (25), pp. 4856-4858 (2002.12.16)