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1.
Electrical characteristics of a TaOxNy/ZrSixOy stack gate dielectric for metal–oxide–semiconductor device applications / Hyungsuk Jung, Hyundoek Yang, Kiju Im, Hyunsang Hwang /
Applied Physics Letters 79 (26), pp. 4408-4410 (2001.12.24)
2.
Electrical Characteristics of TiO2/ZrSixOy Stack Gate Dielectric for Metal-Oxide-Semiconductor Device Applications / Hyunjun Sim, Sanghun Jeon, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 40 (12), pp. 6803-6804 (2001.12)
3.
Effects of N2O Plasma Surface Treatment on the Electrical and Ohmic Contact Properties of n-engine GaN / Hyunsoo Kim, Nae-Man Park, Ja-Soon Jang, Seong-Ju Park, Hyunsang Hwang / Electrochemical and Solid-State Letters 4 (11), pp. G104-G106 (2001.11)
4.
Electrical characteristics of a Dy-doped HfO2 gate dielectric / Hyelan Lee, Sanghun Jeon, Hyunsang Hwang / Applied Physics Letters 79 (16), pp. 2615-2617 (2001.10.15)
5.
Extracting the oxide capacitance using inductance-capacitance-resistance meter measurement on metal-oxide-semiconductor capacitors / Woohyung Lee, Jeshik Shin, Hyundoek Yang, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 40 (9 A), pp. 5308-5309 (2001.09)
6.
Electrical characteristics of ZrOxNy prepared by NH3 annealing of ZrO2 / Sanghun Jeon, Chel-Jong Choi, Tae-Yeon Seong, Hyunsang Hwang / Applied Physics Letters 79 (2), pp. 245-247 (2001.07.09)
7.
Effects of current spreading on the performance of GaN-based light-emitting diodes / Hyunsoo Kim, Seong-Ju Park, Hyunsang Hwang / IEEE Transactions on Electron Devices 48 (6), pp. 1065-1069 (2001.06)
8.
Electrical and Reliability Characteristics of an Ultrathin TaOxNy Gate Dielectric Prepared by O3 Annealing / Hyungsuk Jung, Hyunjun Sim, Kiju Im, Dooyoung Yang, Hyunsang Hwang / Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 40 (4 A), pp. 2221-2222 (2001.04)
9.
Effects of sulfur treatment on electrical and optical performance of InGaN/GaN multiple-quantum-well blue light-emitting diodes / Chul Huh, Sang-Woo Kim, Hyun-Soo Kim, Hyun-Min Kim, Hyunsang Hwang, Seong-Ju Park / Applied Physics Letters 78 (12), pp. 1766-1768 (2001.03.19)
10.
Thermally oxidized GaN film for use as gate insulators / Hyunsoo Kim, Seong-Ju Park, Hyunsang Hwang / Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 19 (2), pp. 579-581 (2001.03)
11.
Effect of an oxidized Ni/Au p contact on the performance of GaN/InGaN multiple quantum well light-emitting diodes  / Hyunsoo Kim, Dong-Joon Kim, Seong-Ju Park, Hyunsang Hwang / Journal of Applied Physics 89 (2), pp. 1506-1508 (2001.01.15)