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1.
C-Te Based Binary OTS Device Exhibiting Excellent Performance and High Thermal Stability for Selector Application / Solomon Amsalu Chekol, Jongmyung Yoo, Jaehyuk Park, Jeonghwan Song, Changhyuck Sung and Hyunsang Hwang  / Nanotechnology 29(34),345202  (201808)
2.
Understanding and Optimization of Pulsed SET Operation in HfO x-Based RRAM Devices for Neuromorphic Computing Applications / Andrea Padovani, Jiyong Woo, Hyunsang Hwang, Luca Larcher  /  IEEE Electron Device Letters   39(5), pp. 672-675  (201805)
3.
Ultrasensitive artificial synapse based on conjugated polyelectrolyte  / Wentao Xu, Thanh Luan Nguyen, Young-Tae Kim, Christoph Wolf, Raphael Pfattner, Jeffrey Lopez, Byeong-Gyu Chae, Sung-Il Kim, Moo Yeol Lee, Eul-Yong Shin, Yong-Young Noh, Joon Hak Oh, Hyunsang Hwang, Chan-Gyung Park, Han Young Woo, Tae-Woo Lee /  Nano Energy   48, pp. 575-581 (201806)
4.
Effect of conductance linearity and multi-level cell characteristics of TaOx-based synapse device on pattern recognition accuracy of neuromorphic system  / Changhyuck Sung, Seokjae Lim, Hyungjun Kim, Taesu Kim, Kibong Moon, Jeonghwan Song, Jae-Joon Kim, Hyunsang Hwang / Nanotechnology 29(11),115203 (201803)
5.
Additional hardening in harmonic structured materials by strain partitioning and back stress / Hyung Keun Park, Kei Ameyama, Jongmyung Yoo, Hyunsang Hwang, Hyoung Seop Kim /   Materials Research Letters   6(5), pp. 261-267  (201802)
6.
Improved Synapse Device with MLC and Conductance Linearity using Quantized Conduction for Neuromorphic Systems / Seokjae Lim, Changhyuck Sung, Hyungjun Kim, Taesu Kim, Jeonghwan Song, Jae-Joon Kim, Hyunsang Hwang /  IEEE Electron Device Letters 39(2),8246549, pp. 312-315  (201802)
7.
NbO2-based frequency storable coupled oscillators for associative memory application / Donguk Lee, Euijun Cha, Jaehyuk Park, Changhyuck Sung, Kibong Moon, Solomon Amasalu Chekol, and Hyunsang Hwang /  IEEE Journal of the Electron Devices Society 6(1), pp. 250-253  (201801)
8.
Bidirectional Non-Filamentary RRAM as an Analog Neuromorphic Synapse, Part I: Al/Mo/Pr0.7Ca0.3MnO3 Material Improvements and Device Measurements / Kibong Moon, Alessandro Fumarola, Severin Sidler, Junwoo Jang, Pritish Narayanan, Robert M Shelby, Geoffrey W Burr, Hyunsang Hwang /  IEEE Journal of the Electron Devices Society 6(1),8168326, pp. 146-155 (201801)
9.
Bidirectional Non-Filamentary RRAM as an Analog Neuromorphic Synapse, Part II: Impact of Al/Mo/Pr0.7Ca0.3MnO3 Device Characteristics on Neural Network Training Accuracy / Alessandro Fumarola, Severin Sidler, Kibong Moon, Junwoo Jang, Robert M Shelby, Pritish Narayanan, Yusuf Leblebici, Hyunsang Hwang, Geoffrey W Burr /  IEEE Journal of the Electron Devices Society 6(1),8171732, pp. 169-178 (201801)