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Papers
1.
Materials and Process Aspect of Cross-Point RRAM /  J. Lee, M. Jo, D.-J. Seong, J. Shin, Hyunsang Hwang / 17th Conference on "Insulating Films on Semiconductors"(INFOS 2011), Grenoble, France,
2011.06.22(Invited)
2.
Overview of Materials and Process Aspect of Cross-point RRAM / Hyunsang Hwang / SEMICON Korea 2011, 2011.01.26(Invited)
3.
Macroscopic Vacancy Mechanism / Hyunsang Hwang / ITRS workshop on Memory Materials for STT RAM and Redox RAM, Tsukuba, Japan, 2010.11.30
4.
Electrical and Reliability Characteristics of RRAM for Cross-point Memory Applications / Hyunsang Hwang / New Non-Volatile Memory Workshop 2010, Hsinchu, Taiwan, 2010.11.12 (Invited)
5.
Panelist of Non-volatile Memory Panel at the International Conference on Solid-State and Integrated Circuit Technology (ICSICT 2010), Shanghai, China, 2010.11.03
6.
Perovskite RRAM / Hyunsang Hwang / International Symposium on Advanced Gate Stack Technology, Albany,2010.09.30(Invited)
7.
A Study on switching mechanism of various RRAM devices and its effects on electrical and reliability characteristics / Hyunsang Hwang / International Workshop on Conductive Bridge Memory (CBRAM), Stanford, 2010.04.23(Invited)
8.

Resistive switching of Reactive Metal / Perovskite Oxide Interface for Non-volatile Memory Applications /  Dong-jun Seong, Musarrat Hasan, Jubong Park, Seungjae Jung, Hyejung Choi, Joonmyoung Lee, Minseok Jo, Wootae Lee / 2009 International Electron Devices and Materials Symposia (IEDMS), 2009.11.19(Invited)

9.

Resistive switching of Reactive Metal / Perovskite Oxide Interface for Non-volatile Memory Applications /  Hyunsang Hwang / 2009 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP(IIRW) , 2009.10.19(Invited)

10.
Excellent switching uniformity of ReRAM device with bi-layer structure /  Hyunsang Hwang / New Non-Volatile Memory Workshop 2008 , 2008.11.18 (Invited)
11.
Resistive switching characteristics of metal oxide for nonvolatile memory applications /  R. Dong, M. Hasan, H. J. Choi, D. S. Lee, M. B. Pyun, D. J. Seong,Hyunsang Hwang / The 9th International Conference on Solid-State and Integrated-Circuit  Technology(ICSICT 2008) , 2008.10.20-23 (Invited)
12.
Resistance switching characteristics of doped metal oxide for nonvolatile memory applications / D.S. Lee, W. Xiang, R. Dong, D.J. Seong and H. Hwang / 38th IEEE Semiconductor Interface Specialists Conference, 4.1, 2007.12.6-8 (Invited)
13.
Resistance switching characteristics of metal oxides for nonvolatile memory application / Rui Dong, Dongsoo Lee, Wenfeng Xiang, Dongjun Sung, Seokjun Oh, Hyejung Choi and Hyunsang Hwang / 2007 211th Meeting of The Electrochemical Society, 2007.05.06-11 (Invited)
14.
Effect of high-pressure deuterium annealing on electrical and reliability characteristics of high-K MOSFET / Hokyung Prak, Musarrat Hasan, Man Chang, Minseok Jo and Hyunsang Hwang / The 12th Workshop on Gate Stack Technology and Physics, 2007.02.02-03 (Invited)
15.
Effect of Surface Treatment on Resistance Switching Characteristics of Schottky Junction for Nonvolatile Memory Application / Dongsoo Lee, Wenfeng Xiang, Dongjun Sung, Rui Dong, Sekojoon Oh and Hyunsang Hwang / 2006 AIST International Workshop on Functional Oxides, 2006. 09. 20-21 (Invited)
16.
Ultra-shallow Junction Formed by Plasma Doping and Laser Annealing/ Sungho Heo and Hyunsang Hwang/ 2006 IEEE International Conference on Advanced Thermal Processing of Semiconductors, 2006. 10. 10-12 (Invited)
17.
Resistance Switching Characteristics of Metal Oxide and Schottky Junction for Nonvolatile Memory Applications/ Dongsoo Lee, Wenfeng Xiang, Dongjun Sung, Rui Dong, Sekojoon Oh, Hyejung Choi and Hyunsang Hwang/ IEEE 2006 Non-Volatile Memory Technology Symposium, 2006. 11. 6-8 (Invited)
18.
Effect of high pressure hydrogen annealing on electrical characteristics of MOSFETs with high-k gate dielectric / H.Park, M. chang, H. Yang, M.S.Rahman, M.Cho, B.H.Lee, R. Choi and Hyunsang Hwang / 2005 International Workshop on Advanced Gate Stack Technology 2005.09.26-28 (Invited)